中国物理B ›› 2026, Vol. 35 ›› Issue (3): 37502-037502.doi: 10.1088/1674-1056/adfdc3

• • 上一篇    下一篇

Coexistence of room-temperature negative differential resistance and unsaturated magnetoresistance effects in germanium-based devices

Xiong He(何雄)1,†, Ling Cai(蔡玲)1, Li-Zhi Yi(易立志)1, Guang-Duo Lu(鲁广铎)1, Li-Qing Pan(潘礼庆)1,‡, and Zhi-Gang Sun(孙志刚)2   

  1. 1 Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China;
    2 Material Science and Engineering School, Taiyuan University of Science and Technology, Taiyuan 030024, China
  • 收稿日期:2025-03-14 修回日期:2025-08-20 接受日期:2025-08-21 发布日期:2026-02-11
  • 基金资助:
    This work was supported in part by the Youth Program of Natural Science Foundation of Hubei Province (Grant No. 2024AFB333), Natural Science Foundation of Yichang (Grant No. A24-3-021), the Special Funding for Talents of China Three Gorges University (Grant No. 8230202), and the National Natural Science Foundation of China (Grant No. 12274258).

Coexistence of room-temperature negative differential resistance and unsaturated magnetoresistance effects in germanium-based devices

Xiong He(何雄)1,†, Ling Cai(蔡玲)1, Li-Zhi Yi(易立志)1, Guang-Duo Lu(鲁广铎)1, Li-Qing Pan(潘礼庆)1,‡, and Zhi-Gang Sun(孙志刚)2   

  1. 1 Hubei Engineering Research Center of Weak Magnetic-field Detection, College of Science, China Three Gorges University, Yichang 443002, China;
    2 Material Science and Engineering School, Taiyuan University of Science and Technology, Taiyuan 030024, China
  • Received:2025-03-14 Revised:2025-08-20 Accepted:2025-08-21 Published:2026-02-11
  • Contact: Xiong He, Li-Qing Pan E-mail:hexiong@ctgu.edu.cn;lpan@ctgu.edu.cn
  • Supported by:
    This work was supported in part by the Youth Program of Natural Science Foundation of Hubei Province (Grant No. 2024AFB333), Natural Science Foundation of Yichang (Grant No. A24-3-021), the Special Funding for Talents of China Three Gorges University (Grant No. 8230202), and the National Natural Science Foundation of China (Grant No. 12274258).

PDF (PC)

8

赞

补充材料

1

摘要： We demonstrate room-temperature negative differential resistance (NDR) and unsaturated magnetoresistance (MR) effects in germanium-based devices. Our findings indicate that the observed NDR primarily originates from the carrier injection effect induced by local impact ionization in germanium. As the magnetic field increases, the MR values exhibit an unsaturated behavior, increasing quadratically at low fields and transitioning to a linear increase at higher fields, reaching approximately 91% at 1 T. We attribute this large unsaturated MR to carrier inhomogeneity. The equivalent Hall electric field strength was used to characterize the degree of carrier inhomogeneity under magnetic fields: a larger equivalent Hall electric field strength indicates stronger carrier inhomogeneity and consequently a larger corresponding MR. The coexistence of excellent room-temperature NDR and large unsaturated MR in germanium-based devices (achieved by constructing electrodes at two edge positions on the semiconductor surface) enables the development of multifunctional devices.

关键词: germanium-based devices, magnetoresistance, negative differential resistance, electrical transport

Abstract: We demonstrate room-temperature negative differential resistance (NDR) and unsaturated magnetoresistance (MR) effects in germanium-based devices. Our findings indicate that the observed NDR primarily originates from the carrier injection effect induced by local impact ionization in germanium. As the magnetic field increases, the MR values exhibit an unsaturated behavior, increasing quadratically at low fields and transitioning to a linear increase at higher fields, reaching approximately 91% at 1 T. We attribute this large unsaturated MR to carrier inhomogeneity. The equivalent Hall electric field strength was used to characterize the degree of carrier inhomogeneity under magnetic fields: a larger equivalent Hall electric field strength indicates stronger carrier inhomogeneity and consequently a larger corresponding MR. The coexistence of excellent room-temperature NDR and large unsaturated MR in germanium-based devices (achieved by constructing electrodes at two edge positions on the semiconductor surface) enables the development of multifunctional devices.

Key words: germanium-based devices, magnetoresistance, negative differential resistance, electrical transport

中图分类号:  (Magnetotransport phenomena; materials for magnetotransport)

  • 75.47.-m
85.30.-z (Semiconductor devices) 83.60.Np (Effects of electric and magnetic fields)