Gate-field control of valley polarization in valleytronics

doi:10.1088/1674-1056/ad401a

中国物理B ›› 2024, Vol. 33 ›› Issue (6): 67303-067303.doi: 10.1088/1674-1056/ad401a

Gate-field control of valley polarization in valleytronics

Ting-Ting Zhang(张婷婷)^1,†, Yilin Han(韩依琳)², Run-Wu Zhang(张闰午)², and Zhi-Ming Yu(余智明)²

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China

收稿日期:2023-11-29 修回日期:2024-03-30 接受日期:2024-04-18 出版日期:2024-06-18 发布日期:2024-06-18
通讯作者: Ting-Ting Zhang E-mail:ttzhang@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 12004035) and the National Natural Science Fund for Excellent Young Scientists Fund Program (Overseas).

Gate-field control of valley polarization in valleytronics

Ting-Ting Zhang(张婷婷)^1,†, Yilin Han(韩依琳)², Run-Wu Zhang(张闰午)², and Zhi-Ming Yu(余智明)²

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China

Received:2023-11-29 Revised:2024-03-30 Accepted:2024-04-18 Online:2024-06-18 Published:2024-06-18
Contact: Ting-Ting Zhang E-mail:ttzhang@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12004035) and the National Natural Science Fund for Excellent Young Scientists Fund Program (Overseas).

摘要/Abstract

摘要： Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and well-separated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information, leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus, a focus in this field is achieving the electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e., the valley-layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronic devices, and the material realizations of the gate-controlled valleytronics materials.

关键词: band structure, electronic transport, optical properties, spintronics

Abstract: Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and well-separated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information, leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus, a focus in this field is achieving the electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e., the valley-layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronic devices, and the material realizations of the gate-controlled valleytronics materials.

Key words: band structure, electronic transport, optical properties, spintronics

中图分类号: (Surface states, band structure, electron density of states)

73.20.At

73.23.-b (Electronic transport in mesoscopic systems) 78.20.-e (Optical properties of bulk materials and thin films) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Ting-Ting Zhang(张婷婷), Yilin Han(韩依琳), Run-Wu Zhang(张闰午), and Zhi-Ming Yu(余智明). Gate-field control of valley polarization in valleytronics[J]. 中国物理B, 2024, 33(6): 67303-067303.

Ting-Ting Zhang(张婷婷), Yilin Han(韩依琳), Run-Wu Zhang(张闰午), and Zhi-Ming Yu(余智明). Gate-field control of valley polarization in valleytronics[J]. Chin. Phys. B, 2024, 33(6): 67303-067303.

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Gate-field control of valley polarization in valleytronics

Gate-field control of valley polarization in valleytronics

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