Transport properties of Hall-type quantum states in disordered bismuthene

doi:10.1088/1674-1056/ad2605

中国物理B ›› 2024, Vol. 33 ›› Issue (4): 47105-047105.doi: 10.1088/1674-1056/ad2605

所属专题： SPECIAL TOPIC — Valleytronics

Transport properties of Hall-type quantum states in disordered bismuthene

Jiaojiao Zhou(周娇娇)¹, Jiangying Yu(余江应)¹, Shuguang Cheng(成淑光)^2,†, and Hua Jiang(江华)^3,‡

1 Key Laboratory of Advanced Electronic Materials and Devices, School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230601, China;
2 Department of Physics, Northwest University, Xi'an 710069, China;
3 School of Physical Science and Technology, Soochow University, Suzhou 215006, China

收稿日期:2023-12-09 修回日期:2024-01-19 接受日期:2024-02-05 出版日期:2024-03-19 发布日期:2024-04-07
通讯作者: Shuguang Cheng, Hua Jiang E-mail:sgcheng@nwu.edu.cn;jianghuaphy@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 12104012), the Natural Science Foundation of Anhui Province of China (Grant No. 2108085MB42), the Key Research and Development Plan of Anhui Province of China (Grant No. 202104a05020048), the Major Science and Technology Project of Anhui Province of China (Grant No. 2021e03020007), and the Doctor Foundation of Anhui Jianzhu University (Grant No. 2019QDZ45).

Transport properties of Hall-type quantum states in disordered bismuthene

Jiaojiao Zhou(周娇娇)¹, Jiangying Yu(余江应)¹, Shuguang Cheng(成淑光)^2,†, and Hua Jiang(江华)^3,‡

1 Key Laboratory of Advanced Electronic Materials and Devices, School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230601, China;
2 Department of Physics, Northwest University, Xi'an 710069, China;
3 School of Physical Science and Technology, Soochow University, Suzhou 215006, China

Received:2023-12-09 Revised:2024-01-19 Accepted:2024-02-05 Online:2024-03-19 Published:2024-04-07
Contact: Shuguang Cheng, Hua Jiang E-mail:sgcheng@nwu.edu.cn;jianghuaphy@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12104012), the Natural Science Foundation of Anhui Province of China (Grant No. 2108085MB42), the Key Research and Development Plan of Anhui Province of China (Grant No. 202104a05020048), the Major Science and Technology Project of Anhui Province of China (Grant No. 2021e03020007), and the Doctor Foundation of Anhui Jianzhu University (Grant No. 2019QDZ45).

摘要/Abstract

摘要： Bismuthene, an inherently hexagonal structure characterized by a huge bulk gap, offers a versatile platform for investigating the electronic transport of various topological quantum states. Using nonequilibrium Green's function method and Landauer—Büttiker formula, we thoroughly investigate the transport properties of various Hall-type quantum states, including quantum spin Hall (QSH) edge states, quantum valley Hall kink (QVHK) states, and quantum spin—valley Hall kink (QSVHK) states, in the presence of various disorders. Based on the exotic transport features, a spin—valley filter, capable of generating a highly spin- and valley-polarized current, is proposed. The valley index and the spin index of the filtered QSVHK state are determined by the staggered potential and the intrinsic spin—orbit coupling, respectively. The efficiency of the spin—valley filter is supported by the spacial current distribution, the valley-resolved conductance, and the spin-resolved conductance. Compared with a sandwich structure for QSVHK, our proposed spin—valley filter can work with a much smaller size and is more accessible in the experiment.

关键词: electronic transport, bismuthene, spin—valley filter

Abstract: Bismuthene, an inherently hexagonal structure characterized by a huge bulk gap, offers a versatile platform for investigating the electronic transport of various topological quantum states. Using nonequilibrium Green's function method and Landauer—Büttiker formula, we thoroughly investigate the transport properties of various Hall-type quantum states, including quantum spin Hall (QSH) edge states, quantum valley Hall kink (QVHK) states, and quantum spin—valley Hall kink (QSVHK) states, in the presence of various disorders. Based on the exotic transport features, a spin—valley filter, capable of generating a highly spin- and valley-polarized current, is proposed. The valley index and the spin index of the filtered QSVHK state are determined by the staggered potential and the intrinsic spin—orbit coupling, respectively. The efficiency of the spin—valley filter is supported by the spacial current distribution, the valley-resolved conductance, and the spin-resolved conductance. Compared with a sandwich structure for QSVHK, our proposed spin—valley filter can work with a much smaller size and is more accessible in the experiment.

Key words: electronic transport, bismuthene, spin—valley filter

中图分类号: (Methods of electronic structure calculations)

71.15.-m

73.20.-r (Electron states at surfaces and interfaces) 73.23.-b (Electronic transport in mesoscopic systems) 73.63.-b (Electronic transport in nanoscale materials and structures)

Jiaojiao Zhou(周娇娇), Jiangying Yu(余江应), Shuguang Cheng(成淑光), and Hua Jiang(江华). Transport properties of Hall-type quantum states in disordered bismuthene[J]. 中国物理B, 2024, 33(4): 47105-047105.

Jiaojiao Zhou(周娇娇), Jiangying Yu(余江应), Shuguang Cheng(成淑光), and Hua Jiang(江华). Transport properties of Hall-type quantum states in disordered bismuthene[J]. Chin. Phys. B, 2024, 33(4): 47105-047105.

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Transport properties of Hall-type quantum states in disordered bismuthene

Transport properties of Hall-type quantum states in disordered bismuthene

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