中国物理B ›› 2023, Vol. 32 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/accf7b

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On the origin of carrier localization in AlInAsSb digital alloy

Wen-Guang Zhou(周文广)1,2, Dong-Wei Jiang(蒋洞微)1,2, Xiang-Jun Shang(尚向军)1,2, Dong-Hai Wu(吴东海)1,2, Fa-Ran Chang(常发冉)3, Jun-Kai Jiang(蒋俊锴)1,2, Nong Li(李农)1,2, Fang-Qi Lin(林芳祁)1,2, Wei-Qiang Chen(陈伟强)1,2, Hong-Yue Hao(郝宏玥)1,2, Xue-Lu Liu(刘雪璐)1,2, Ping-Heng Tan(谭平恒)1,2, Guo-Wei Wang(王国伟)1,2,†, Ying-Qiang Xu(徐应强)1,2,‡, and Zhi-Chuan Niu(牛智川)1,2,§   

  1. 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2022-11-10 修回日期:2023-04-21 接受日期:2023-04-24 发布日期:2023-07-14
  • 通讯作者: Guo-Wei Wang, Ying-Qiang Xu, Zhi-Chuan Niu E-mail:wangguowei@semi.ac.cn;yingqxu@semi.ac.cn;zcniu@semi.ac.cn
  • 基金资助:
    The authors thank Professor Yuan Yao (the Institute of Physics, Chinese Academy of Sciences) for his help in HAADF--STEM testing and analysis.Project supported by the National Key Technologies Research and Development Program of China (Grant Nos.2019YFA0705203, 2019YFA070104, 2018YFA0209102, and 2018YFA0209104), the Major Program of the National Natural Science Foundation of China (Grant Nos.61790581, 62004189, and 61274013), the Aeronautical Science Foundation of China (Grant No.20182436004), the Key Research Program of the Chinese Academy of Sciences (Grant No.XDPB22), and the Research Foundation for Advanced Talents of the Chinese Academy of Sciences (Grant No.E27RBB03).

On the origin of carrier localization in AlInAsSb digital alloy

Wen-Guang Zhou(周文广)1,2, Dong-Wei Jiang(蒋洞微)1,2, Xiang-Jun Shang(尚向军)1,2, Dong-Hai Wu(吴东海)1,2, Fa-Ran Chang(常发冉)3, Jun-Kai Jiang(蒋俊锴)1,2, Nong Li(李农)1,2, Fang-Qi Lin(林芳祁)1,2, Wei-Qiang Chen(陈伟强)1,2, Hong-Yue Hao(郝宏玥)1,2, Xue-Lu Liu(刘雪璐)1,2, Ping-Heng Tan(谭平恒)1,2, Guo-Wei Wang(王国伟)1,2,†, Ying-Qiang Xu(徐应强)1,2,‡, and Zhi-Chuan Niu(牛智川)1,2,§   

  1. 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2022-11-10 Revised:2023-04-21 Accepted:2023-04-24 Published:2023-07-14
  • Contact: Guo-Wei Wang, Ying-Qiang Xu, Zhi-Chuan Niu E-mail:wangguowei@semi.ac.cn;yingqxu@semi.ac.cn;zcniu@semi.ac.cn
  • Supported by:
    The authors thank Professor Yuan Yao (the Institute of Physics, Chinese Academy of Sciences) for his help in HAADF--STEM testing and analysis.Project supported by the National Key Technologies Research and Development Program of China (Grant Nos.2019YFA0705203, 2019YFA070104, 2018YFA0209102, and 2018YFA0209104), the Major Program of the National Natural Science Foundation of China (Grant Nos.61790581, 62004189, and 61274013), the Aeronautical Science Foundation of China (Grant No.20182436004), the Key Research Program of the Chinese Academy of Sciences (Grant No.XDPB22), and the Research Foundation for Advanced Talents of the Chinese Academy of Sciences (Grant No.E27RBB03).

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摘要： We compared the photoluminescence (PL) properties of AlInAsSb digital alloy samples with different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature-dependent S-shape behavior is observed and explained using a thermally activated redistribution model within a Gaussian distribution of localized states. There are two different mechanisms for the origin of the PL intensity quenching for the AlInAsSb digital alloy. The high-temperature activation energy E1 is positively correlated with the interface thickness, whereas the low-temperature activation energy E2 is negatively correlated with the interface thickness. A quantitative high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) study shows that the interface quality improves as the interface thickness increases. Our results confirm that E1 comes from carrier trapping at a state in the InSb interface layer, while E2 originates from the exciton binding energy due to the roughness of the AlAs interface layer.

关键词: photoluminescence spectroscopy, optical properties, AlInAsSb, digital alloy

Abstract: We compared the photoluminescence (PL) properties of AlInAsSb digital alloy samples with different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature-dependent S-shape behavior is observed and explained using a thermally activated redistribution model within a Gaussian distribution of localized states. There are two different mechanisms for the origin of the PL intensity quenching for the AlInAsSb digital alloy. The high-temperature activation energy E1 is positively correlated with the interface thickness, whereas the low-temperature activation energy E2 is negatively correlated with the interface thickness. A quantitative high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) study shows that the interface quality improves as the interface thickness increases. Our results confirm that E1 comes from carrier trapping at a state in the InSb interface layer, while E2 originates from the exciton binding energy due to the roughness of the AlAs interface layer.

Key words: photoluminescence spectroscopy, optical properties, AlInAsSb, digital alloy

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
68.65.Cd (Superlattices) 78.55.-m (Photoluminescence, properties and materials) 68.35.Ct (Interface structure and roughness)