中国物理B ›› 2023, Vol. 32 ›› Issue (12): 126102-126102.doi: 10.1088/1674-1056/acd7cf
Dongke Li(李东珂)1,2,†, Junnan Han(韩俊楠)1,†, Teng Sun(孙腾)1, Jiaming Chen(陈佳明)1, Etienne Talbot3, Rémi Demoulin3, Wanghua Chen(陈王华)4,‡, Xiaodong Pi(皮孝东)2, Jun Xu(徐骏)1,§, and Kunji Chen(陈坤基)1
Dongke Li(李东珂)1,2,†, Junnan Han(韩俊楠)1,†, Teng Sun(孙腾)1, Jiaming Chen(陈佳明)1, Etienne Talbot3, Rémi Demoulin3, Wanghua Chen(陈王华)4,‡, Xiaodong Pi(皮孝东)2, Jun Xu(徐骏)1,§, and Kunji Chen(陈坤基)1
摘要: Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.
中图分类号: (Ge and Si)