中国物理B ›› 2000, Vol. 9 ›› Issue (10): 783-786.doi: 10.1088/1009-1963/9/10/013

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1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS

王占国1, 梁建军2, 陈维德2, 王永谦2, 常勇3   

  1. (1)Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic; (3)State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 收稿日期:2000-02-02 修回日期:2000-04-25 出版日期:2000-12-25 发布日期:2005-06-10
  • 基金资助:
    Project supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040).

1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS

Liang Jian-jun (梁建军)abc, Chen Wei-de (陈维德)abc, Wang Yong-qian (王永谦)abc, Chang Yong (常勇)c, Wang Zhan-guo (王占国)a   

  1. a Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;  b Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China c State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2000-02-02 Revised:2000-04-25 Online:2000-12-25 Published:2005-06-10
  • Supported by:
    Project supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040).

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摘要： Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.

关键词: erbium, photoluminescence, a-SiO:H, boron and phosphorus co-doping

Abstract: Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.

Key words: erbium, photoluminescence, a-SiO:H, boron and phosphorus co-doping

中图分类号:  (Kinetics of defect formation and annealing)

  • 61.72.Cc
61.72.Mm (Grain and twin boundaries) 78.55.Qr (Amorphous materials; glasses and other disordered solids) 81.40.Gh (Other heat and thermomechanical treatments)