中国物理B ›› 2023, Vol. 32 ›› Issue (12): 126102-126102.doi: 10.1088/1674-1056/acd7cf

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Dongke Li(李东珂)1,2,†, Junnan Han(韩俊楠)1,†, Teng Sun(孙腾)1, Jiaming Chen(陈佳明)1, Etienne Talbot3, Rémi Demoulin3, Wanghua Chen(陈王华)4,‡, Xiaodong Pi(皮孝东)2, Jun Xu(徐骏)1,§, and Kunji Chen(陈坤基)1   

  1. 1 School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China;
    2 ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Materials Science and Engineering, Zhejiang University, Hangzhou 311200, China;
    3 Univ Rouen Normandie, INSA Rouen Normandie, CNRS, GPM UMR 6634, F-76000 Rouen, France;
    4 School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
  • 收稿日期:2023-03-01 修回日期:2023-05-04 接受日期:2023-05-23 出版日期:2023-11-14 发布日期:2023-11-22
  • 通讯作者: Wanghua Chen, Jun Xu E-mail:chenwanghua@nbu.edu.cn;junxu@nju.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No.2018YFB2200101), the National Natural Science Foundation of China (Grant Nos.62004078 and 61921005), Natural Science Foundation of Jiangsu Province (Grant No.BK20201073), Natural Science Foundation of Ningbo (Grant No.2021J068), ANR DONNA (Grant No.ANR-18-CE09-0034), and Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou (Grant No.TD2022012). This work was partially supported by the CNRS Federation IRMA-FR 3095.

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Dongke Li(李东珂)1,2,†, Junnan Han(韩俊楠)1,†, Teng Sun(孙腾)1, Jiaming Chen(陈佳明)1, Etienne Talbot3, Rémi Demoulin3, Wanghua Chen(陈王华)4,‡, Xiaodong Pi(皮孝东)2, Jun Xu(徐骏)1,§, and Kunji Chen(陈坤基)1   

  1. 1 School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China;
    2 ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Materials Science and Engineering, Zhejiang University, Hangzhou 311200, China;
    3 Univ Rouen Normandie, INSA Rouen Normandie, CNRS, GPM UMR 6634, F-76000 Rouen, France;
    4 School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
  • Received:2023-03-01 Revised:2023-05-04 Accepted:2023-05-23 Online:2023-11-14 Published:2023-11-22
  • Contact: Wanghua Chen, Jun Xu E-mail:chenwanghua@nbu.edu.cn;junxu@nju.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No.2018YFB2200101), the National Natural Science Foundation of China (Grant Nos.62004078 and 61921005), Natural Science Foundation of Jiangsu Province (Grant No.BK20201073), Natural Science Foundation of Ningbo (Grant No.2021J068), ANR DONNA (Grant No.ANR-18-CE09-0034), and Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou (Grant No.TD2022012). This work was partially supported by the CNRS Federation IRMA-FR 3095.

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摘要： Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.

关键词: Si nanocrystals, phosphorous and boron, co-doping, impurity distribution

Abstract: Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.

Key words: Si nanocrystals, phosphorous and boron, co-doping, impurity distribution

中图分类号:  (Ge and Si)

  • 61.72.uf
61.82.Rx (Nanocrystalline materials) 61.72.U- (Doping and impurity implantation) 61.72.sh (Impurity distribution)