Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

doi:10.1088/1674-1056/accf7c

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 97502-097502.doi: 10.1088/1674-1056/accf7c

Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

Zhengzhong Zhang(张正中)^1,2,†, Ruya Guo(郭儒雅)¹, Rui Bo(薄锐)¹, and Hao Liu(刘昊)^1,‡

1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai'an 223003, China;
2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

收稿日期:2023-01-17 修回日期:2023-04-10 接受日期:2023-04-24 发布日期:2023-08-28
通讯作者: Zhengzhong Zhang, Hao Liu E-mail:zeikeezhang@163.com;hyitliuh@163.com
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of Huai’an (Grant Nos. HAB202229 and HAB202150), and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 22KJD140002).

Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

Zhengzhong Zhang(张正中)^1,2,†, Ruya Guo(郭儒雅)¹, Rui Bo(薄锐)¹, and Hao Liu(刘昊)^1,‡

1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai'an 223003, China;
2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

Received:2023-01-17 Revised:2023-04-10 Accepted:2023-04-24 Published:2023-08-28
Contact: Zhengzhong Zhang, Hao Liu E-mail:zeikeezhang@163.com;hyitliuh@163.com
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of Huai’an (Grant Nos. HAB202229 and HAB202150), and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 22KJD140002).

摘要/Abstract

摘要： A single-molecule magnet is a long-sought-after nanoscale component because it can enable us to miniaturize nonvolatile memory storage devices. The signature of a single-molecule magnet is switching between two bistable magnetic ground states under an external magnetic field. Based on this feature, we theoretically investigate a magnetic-field-controlled reversible resistance change active at low temperatures in a molecular magnetic tunnel junction, which consists of a single-molecule magnet sandwiched between a ferromagnetic electrode and a normal metal electrode. Our numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode magnetization. Moreover, different magnetic configurations can be "read out" based on different resistance states or different spin polarization parameters in the current spectrum, even in the absence of a magnetic field. Such an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve devices. The difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic molecule. This proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices, with potential applications in future high-density nonvolatile memory devices.

关键词: single-molecule magnet, spin dependent electron tunneling, spin valve

Abstract: A single-molecule magnet is a long-sought-after nanoscale component because it can enable us to miniaturize nonvolatile memory storage devices. The signature of a single-molecule magnet is switching between two bistable magnetic ground states under an external magnetic field. Based on this feature, we theoretically investigate a magnetic-field-controlled reversible resistance change active at low temperatures in a molecular magnetic tunnel junction, which consists of a single-molecule magnet sandwiched between a ferromagnetic electrode and a normal metal electrode. Our numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode magnetization. Moreover, different magnetic configurations can be "read out" based on different resistance states or different spin polarization parameters in the current spectrum, even in the absence of a magnetic field. Such an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve devices. The difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic molecule. This proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices, with potential applications in future high-density nonvolatile memory devices.

Key words: single-molecule magnet, spin dependent electron tunneling, spin valve

中图分类号: (Molecular magnets)

75.50.Xx

75.60.Jk (Magnetization reversal mechanisms) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Zhengzhong Zhang(张正中), Ruya Guo(郭儒雅), Rui Bo(薄锐), and Hao Liu(刘昊). Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets[J]. 中国物理B, 2023, 32(9): 97502-097502.

Zhengzhong Zhang(张正中), Ruya Guo(郭儒雅), Rui Bo(薄锐), and Hao Liu(刘昊). Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets[J]. Chin. Phys. B, 2023, 32(9): 97502-097502.

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Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

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