Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

doi:10.1088/1674-1056/abd9b1

中国物理B ›› 2021, Vol. 30 ›› Issue (6): 67501-067501.doi: 10.1088/1674-1056/abd9b1

Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

Zheng-Zhong Zhang(张正中)^1,2,‡ and Hao Liu(刘昊)^1,†

1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China;
2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

收稿日期:2020-08-29 修回日期:2020-12-16 接受日期:2021-01-08 出版日期:2021-05-18 发布日期:2021-06-17
通讯作者: Hao Liu, Zheng-Zhong Zhang E-mail:hyitliuh@163.com;zeikeezhang@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 18KJD140005), and Zhengzhong Zhang is supported by the China Postdoctoral Science Foundation (Grant No. 2013M541635) and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

Zheng-Zhong Zhang(张正中)^1,2,‡ and Hao Liu(刘昊)^1,†

1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China;
2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

Received:2020-08-29 Revised:2020-12-16 Accepted:2021-01-08 Online:2021-05-18 Published:2021-06-17
Contact: Hao Liu, Zheng-Zhong Zhang E-mail:hyitliuh@163.com;zeikeezhang@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 18KJD140005), and Zhengzhong Zhang is supported by the China Postdoctoral Science Foundation (Grant No. 2013M541635) and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

摘要/Abstract

摘要： A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a single-molecule magnet sandwiched between the nonmagnetic and ferromagnetic (FM) leads. By applying different voltage pulses V_write across the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_probe. It is shown that the polarization of the spin current is extremely high (up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.

关键词: single-molecule magnet, spin-transfer torque, spin-dependent electron tunneling

Abstract: A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a single-molecule magnet sandwiched between the nonmagnetic and ferromagnetic (FM) leads. By applying different voltage pulses V_write across the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_probe. It is shown that the polarization of the spin current is extremely high (up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.

Key words: single-molecule magnet, spin-transfer torque, spin-dependent electron tunneling

中图分类号: (Thermoelectric and thermomagnetic effects)

72.15.Jf

75.50.Xx (Molecular magnets) 75.60.Jk (Magnetization reversal mechanisms) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Zheng-Zhong Zhang(张正中) and Hao Liu(刘昊). Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet[J]. 中国物理B, 2021, 30(6): 67501-067501.

Zheng-Zhong Zhang(张正中) and Hao Liu(刘昊). Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet[J]. Chin. Phys. B, 2021, 30(6): 67501-067501.

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Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

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