Narrowed Si0.7Ge0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

doi:10.1088/1674-1056/acad71

中国物理B ›› 2023, Vol. 32 ›› Issue (7): 77302-077302.doi: 10.1088/1674-1056/acad71

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Hao-Yan Liu(刘昊炎)^1,2, Yong-Liang Li(李永亮)^1,2,†, and Wen-Wu Wang(王文武)^1,2

1 University of Chinese Academy of Sciences(UCAS), Beijing 100049, China;
2 Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2022-10-29 修回日期:2022-12-04 接受日期:2022-12-21 出版日期:2023-06-15 发布日期:2023-07-05
通讯作者: Yong-Liang Li E-mail:liyongliang@ime.ac.cn
基金资助:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4202078).

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Hao-Yan Liu(刘昊炎)^1,2, Yong-Liang Li(李永亮)^1,2,†, and Wen-Wu Wang(王文武)^1,2

1 University of Chinese Academy of Sciences(UCAS), Beijing 100049, China;
2 Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2022-10-29 Revised:2022-12-04 Accepted:2022-12-21 Online:2023-06-15 Published:2023-07-05
Contact: Yong-Liang Li E-mail:liyongliang@ime.ac.cn
Supported by:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4202078).

摘要/Abstract

摘要： A narrowed Si_0.7Ge_0.3 channel fin field-effect transistor (FinFET) device is demonstrated in detail by using an accurate cyclic wet treatment process. The Si_0.7Ge_0.3 fin/per side of 0.63 nm in thickness can be accurately removed in each cycle by utilizing a self-limited oxidation with 40% HNO₃ solution in 40 s and oxidation removal can be achieved with 1% HF solution in 10 s. As a result, after the dummy gate removal, the fin width of Si_0.7Ge_0.3 can be narrowed from 20 nm to 8 nm by utilizing 10 cycles of this wet treatment process. Compared with the conventional Si_0.7Ge_0.3 FinFET under a similar process, the narrowed Si_0.7Ge_0.3 channel FinFET can realize a strong gate control capability by using this newly developed wet treatment process, because its subthreshold slope can be reduced by 24%, improving from 87 mV/dec to 64 mV/dec.

关键词: Si_0.7Ge_0.3, FinFET, cyclic wet treatment, self-limited oxidation

Abstract: A narrowed Si_0.7Ge_0.3 channel fin field-effect transistor (FinFET) device is demonstrated in detail by using an accurate cyclic wet treatment process. The Si_0.7Ge_0.3 fin/per side of 0.63 nm in thickness can be accurately removed in each cycle by utilizing a self-limited oxidation with 40% HNO₃ solution in 40 s and oxidation removal can be achieved with 1% HF solution in 10 s. As a result, after the dummy gate removal, the fin width of Si_0.7Ge_0.3 can be narrowed from 20 nm to 8 nm by utilizing 10 cycles of this wet treatment process. Compared with the conventional Si_0.7Ge_0.3 FinFET under a similar process, the narrowed Si_0.7Ge_0.3 channel FinFET can realize a strong gate control capability by using this newly developed wet treatment process, because its subthreshold slope can be reduced by 24%, improving from 87 mV/dec to 64 mV/dec.

Key words: Si_0.7Ge_0.3, FinFET, cyclic wet treatment, self-limited oxidation

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.22.-f (Electronic structure of nanoscale materials and related systems) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

Hao-Yan Liu(刘昊炎), Yong-Liang Li(李永亮), and Wen-Wu Wang(王文武). Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process[J]. 中国物理B, 2023, 32(7): 77302-077302.

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Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

Narrowed Si_0.7Ge_0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process

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