Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction

doi:10.1088/1674-1056/ac8af7

中国物理B ›› 2023, Vol. 32 ›› Issue (3): 37401-037401.doi: 10.1088/1674-1056/ac8af7

Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction

Zhi-Wei Hu(胡志伟)^1,2,† and Xiang-Gang Qiu(邱祥冈)^1,2,3

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

收稿日期:2022-07-04 修回日期:2022-08-17 接受日期:2022-08-19 出版日期:2023-02-14 发布日期:2023-02-21
通讯作者: Zhi-Wei Hu E-mail:2381956704@qq.com

Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction

Zhi-Wei Hu(胡志伟)^1,2,† and Xiang-Gang Qiu(邱祥冈)^1,2,3

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

Received:2022-07-04 Revised:2022-08-17 Accepted:2022-08-19 Online:2023-02-14 Published:2023-02-21
Contact: Zhi-Wei Hu E-mail:2381956704@qq.com

摘要/Abstract

摘要： Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor-semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching. An abnormal magnetoresistance effect, which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface, has been distinctly observed when the Nb film is in the superconductiing state. By considering the heterojunction interface being equivalent to the structure of superconductor-barrier layer-superconductor configuration, we could generally understand this unusual effect based on the Andreev reflection mechanism. Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.

关键词: superconductor, magnetoresistance, heterojunction

Abstract: Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor-semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching. An abnormal magnetoresistance effect, which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface, has been distinctly observed when the Nb film is in the superconductiing state. By considering the heterojunction interface being equivalent to the structure of superconductor-barrier layer-superconductor configuration, we could generally understand this unusual effect based on the Andreev reflection mechanism. Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.

Key words: superconductor, magnetoresistance, heterojunction

中图分类号: (Granular, melt-textured, amorphous, and composite superconductors)

74.81.Bd

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction[J]. 中国物理B, 2023, 32(3): 37401-037401.

Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction[J]. Chin. Phys. B, 2023, 32(3): 37401-037401.

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Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction

Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction

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