[1] Lee V W, Twu N and Kymissis I 2016 J. Inf. Disp. 32 16 [2] Fan Z Y, Lin J Y and Jiang H X 2008 J. Phys. D 41 094001 [3] Templier F 2016 J. Soc. Inf. Disp. 24 669 [4] Day J, Li J, Lie D Y C, Bradford C, Lin J Y and Jiang H X 2011 Appl. Phys. Lett. 99 031116 [5] Green R P, McKendry J J D, Massoubre D, Gu E, Dawson M D and Kelly A E 2013 Appl. Phys. Lett. 102 091103 [6] Rajbhandari S, McKendry J J D, Herrnsdorf J, Chun H, Faulkner G, Haas H, Watson I M, O'Brien D and Dawson M D 2017 Semicond. Sci. Technol. 32 023001 [7] Ozden I, Diagne M, Nurmikko A V, Han J and Takeuchi T 2001 Phys. Status Solidi A 188 139 [8] Liu Z J, Wong K M, Keung C W, Tang C W and Lau K M 2009 IEEE J. Sel. Top. Quantum Electron. 15 4 [9] Otto I, Mounir C, Nirschl A, Pfeuffer A, Schapers Th, Schwarz U T and von Malm N 2015 Appl. Phys. Lett. 106 151108 [10] Li K H, Cheung Y F, Tang C W, Zhao C, Lau K M and Choi H W 2016 Phys. Status Solidi A 213 5 [11] Templier F, Dupre L, Tirano S, Marra M, Verney V, Olivier F, Aventurier B, Sarrasin D, Marion F, Catelain T, Berger F, Mathieu L, Dupont B and Gamarra P 2016 Dig. Tech. Pap.-Soc. Inf. Disp. Int. Symp. 47 1013 [12] Ploch N L, Rodriguez H, Stölmackerr C, Hoppe M, Lapeyrade M, Stell-mach J, Mehnke, F, Wernicke T, Knauer A, Kueller V, Weyers M, Ein-feldt S and Kneissl M 2013 IEEE Trans. Electron Devices 60 782 [13] Olivier F, Daami A, Licitra C and Templier F 2017 Appl. Phys. Lett. 111 022104 [14] Wong M S, Hwang D, Alhassan A I, Lee C, Ley R, Nakamura S and DenBaars S P 2018 Opt. Express 26 21324 [15] Konoplev S S, Bulashevich K A and Karpov S Y 2018 Phys. Status Solidi A 215 1700508 [16] Yang C M, Kim D S, Park Y S, Lee J H, Lee Y S and Lee J H 2012 Opt. Photonics J. 2 185 [17] Zhang Y, Guo Y, Li Z, Wei T, Li J, Yi X and Wang G 2012 IEEE Photonics Technol. Lett. 24 4 [18] Zuo P, Zhao B, Yan S, Yue G, Yang H, Li Y, Wu H, Jiang Y, Jia H, Zhou J and Chen H 2016 Opt. Quantum Electron. 48 1 [19] Hwang D, Mughal A, Pynn C D, Nakamura S and DenBaars S P 2017 Appl. Phys. Express 10 032101 [20] Templier F, Benaïssa L, Aventurier B, Nardo C D, Charles M, Daami A, Henry F and Dupre L 2017 Dig. Tech. Pap. - Soc. Inf. Disp. Int. Symp. 48 268 [21] El-Masry N A, Piner E L, Liu S X and Bedair S M 1998 Appl. Phys. Lett. 72 40 [22] Wakahara A, Tokuda T, Dang X Z, Noda S and Sasaki A 1997 Appl. Phys. Lett. 71 906 [23] Inatomi Y, Kanagawa Y, Ito T and Suski T 2017 Jpn. J. Appl. Phys. 56 078003 [24] Wang T 2016 Semicond. Sci. Technol. 31 093003 [25] Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Sequeira A D, Franco N, Watson I M and Deatcher C J 2002 Appl. Phys. Lett. 80 3913 [26] Shimizu M, Kawaguchi Y, Hiramatsu K and Sawaki N 1997 Jpn. J. Appl. Phys. 36 3381 [27] Sonderegger S, Feltin E, Merano M, Crottini A, Carlin J F, Sachot R, Deveaud B, Grandjean N and Ganiere J D 2006 Appl. Phys. Lett. 89 232109 [28] Tawfik W Z, Hyun G Y, Ryu S W, Ha J S and Lee J K 2016 Opt. Mater. 55 17 [29] Iida D, Zhuang Z, Kirilenko P, Velazquez-Rizo M, Najmi M A and Ohkawaa K 2020 Appl. Phys. Lett. 116 162101 [30] Hwang J I, Hashimoto R, Saito S and Nunoue S 2014 Appl. Phys. Express 7 071003 [31] Hashimoto R, Hwang J, Saito S and Nunoue S 2014 Phys. Status Solidi C 11 628 [32] Zhuang Z, Iida D and Ohkawa K 2022 Jpn. J. Appl. Phys. 61 SA0809 [33] Bai J, Cai Y, Feng P, Fletcher P, Zhao X, Zhu C and Wang T 2020 ACS Photonics 7 411 [34] Bai J, Cai Y, Feng P, Fletcher P, Zhu C, Tian Y and Wang T 2020 ACS Nano 14 6906 [35] Martinez de Arriba G, Feng P, Xu C, Zhu C, Bai J and Wang T 2022 ACS Photonics 9 2073 [36] Feng P, Xu C, Bai J, Zhu C, Farrer I, Martinez de Arriba G and Wang T 2022 ACS Appl. Electron. Mater. 4 2787 [37] Esendag V, Bai J, Fletcher P, Feng P, Zhu C, Cai Y and Wang T 2021 Physica Status Solidi A 218 2100474 [38] Cai Y, Haggar J I H, Zhu C, Feng P, Bai J and Wang T 2021 ACS Appl. Electron. Mater. 3 445 [39] Cai Y, Zhu C, Zhong W, Feng P, Jiang S and Wang T 2021 Adv. Mater. Technol. 6 2100214 [40] Li P, Li H, Yang Y, Zhang H, Shapturenka P, Wong M, Lynsky C, Iza M, Gordon M J, Speck J S, Nakamura S and DenBaars S P 2022 Appl. Phys. Lett. 120 041102 [41] Li P, Li H, Zhang H, Yang Y, Wong M S, Lynsky C, Iza M, Gordon M J, Speck J S, Nakamura S and DenBaars S P 2022 Appl. Phys. Lett. 120 121102 [42] Horng R H, Ye C X, Chen P W, Iida D, Ohkawa K, Wu Y R and Wuu D S 2022 Sci. Rep. 12 1324 [43] Yu L, Wang L, Yang P, Hao Z, Yu J, Luo Y, Sun C, Xiong B, Han Y, Wang J, Li H and Wang L 2022 Opt. Mater. Express 12 3225 [44] Li Z, Waldron J, Detchprohm T, Wetzel C, Karlicek Jr R F and Chow T P 2013 Appl. Phys. Lett. 102 192107 [45] Liu Z, Huang T, Ma J, Liu C and Lau K M 2014 IEEE Electron Device Lett. 35 330 [46] Liu Z, Ma J, Huang T, Liu C and Lau K M 2014 Appl. Phys. Lett. 104 091103 [47] Liu C, Cai Y, Liu Z, Ma J and Lau K M 2015 Appl. Phys. Lett. 106 181110 [48] Cai Y, Zou X, Liu C and Lau K M 2017 IEEE Electron Device Lett. 39 224 [49] Yu L, Wang L, Hao Z, Luo Y, Sun C, Xiong B, Han Y, Wang J and Li H 2022 Semicond. Sci. Technol. 37 023001 |