中国物理B ›› 2022, Vol. 31 ›› Issue (10): 106103-106103.doi: 10.1088/1674-1056/ac7ccd

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Lattice damage in InGaN induced by swift heavy ion irradiation

Ning Liu(刘宁)1,2, Li-Min Zhang(张利民)2,†, Xue-Ting Liu(刘雪婷)2, Shuo Zhang(张硕)2, Tie-Shan Wang(王铁山)2, and Hong-Xia Guo(郭红霞)1   

  1. 1. State Key Laboratory of Laser Interaction with Matter, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    2. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2022-05-05 修回日期:2022-06-24 出版日期:2022-10-16 发布日期:2022-09-24
  • 通讯作者: Li-Min Zhang E-mail:zhanglm@lzu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11875154) and State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2014).

Lattice damage in InGaN induced by swift heavy ion irradiation

Ning Liu(刘宁)1,2, Li-Min Zhang(张利民)2,†, Xue-Ting Liu(刘雪婷)2, Shuo Zhang(张硕)2, Tie-Shan Wang(王铁山)2, and Hong-Xia Guo(郭红霞)1   

  1. 1. State Key Laboratory of Laser Interaction with Matter, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    2. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2022-05-05 Revised:2022-06-24 Online:2022-10-16 Published:2022-09-24
  • Contact: Li-Min Zhang E-mail:zhanglm@lzu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11875154) and State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2014).

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摘要： The microstructural responses of In0.32Ga0.68N and In0.9Ga0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In0.9Ga0.1N is more susceptible to irradiation than the Ga-rich In0.32Ga0.68N. Xe ion irradiation with a fluence of 7× 1011 ions·cm-2 leads to little damage in In0.32Ga0.68N but an obvious lattice expansion in In0.9Ga0.1N. The level of lattice disorder in In0.9Ga0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In0.9Ga0.1N.

关键词: InGaN, swift heavy ions, irradiation effects

Abstract: The microstructural responses of In0.32Ga0.68N and In0.9Ga0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In0.9Ga0.1N is more susceptible to irradiation than the Ga-rich In0.32Ga0.68N. Xe ion irradiation with a fluence of 7× 1011 ions·cm-2 leads to little damage in In0.32Ga0.68N but an obvious lattice expansion in In0.9Ga0.1N. The level of lattice disorder in In0.9Ga0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In0.9Ga0.1N.

Key words: InGaN, swift heavy ions, irradiation effects

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
78.66.Fd (III-V semiconductors)