C band microwave damage characteristics of pseudomorphic high electron mobility transistor

doi:10.1088/1674-1056/abf135

中国物理B ›› 2021, Vol. 30 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/abf135

C band microwave damage characteristics of pseudomorphic high electron mobility transistor

Qi-Wei Li(李奇威)^1,2,†, Jing Sun(孙静)², Fu-Xing Li(李福星)³, Chang-Chun Chai(柴常春)³, Jun Ding(丁君)¹, and Jin-Yong Fang(方进勇)²

1 School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710129, China;
2 China Academy of Space Technology(Xi'an), Xi'an 710100, China;
3 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2020-11-27 修回日期:2021-03-02 接受日期:2021-03-24 出版日期:2021-08-19 发布日期:2021-08-24
通讯作者: Qi-Wei Li E-mail:liqiwei161@163.com
基金资助:
Project supported by the Foundation Enhancement Plan and the National Natural Science Foundation of China (Grant No. 61974116).

C band microwave damage characteristics of pseudomorphic high electron mobility transistor

Qi-Wei Li(李奇威)^1,2,†, Jing Sun(孙静)², Fu-Xing Li(李福星)³, Chang-Chun Chai(柴常春)³, Jun Ding(丁君)¹, and Jin-Yong Fang(方进勇)²

1 School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710129, China;
2 China Academy of Space Technology(Xi'an), Xi'an 710100, China;
3 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2020-11-27 Revised:2021-03-02 Accepted:2021-03-24 Online:2021-08-19 Published:2021-08-24
Contact: Qi-Wei Li E-mail:liqiwei161@163.com
Supported by:
Project supported by the Foundation Enhancement Plan and the National Natural Science Foundation of China (Grant No. 61974116).

摘要/Abstract

摘要： The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor (pHEMT) under the irradiation of C band high-power microwave (HPM) is investigated in this paper. Based on the theoretical analysis, the thermoelectric coupling model is established, and the key damage parameters of the device under typical pulse conditions are predicted, including the damage location, damage power, etc. By the injection effect test and device microanatomy analysis through using scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage, especially the side below the gate near the source. The damage power in the injection test is about 40 dBm and in good agreement with the simulation result. This work has a certain reference value for microwave damage assessment of pHEMT.

关键词: high power microwave, pseudomorphic high electron mobility transistor, damage mechanism, C band, low noise amplifier (LNA)

Abstract: The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor (pHEMT) under the irradiation of C band high-power microwave (HPM) is investigated in this paper. Based on the theoretical analysis, the thermoelectric coupling model is established, and the key damage parameters of the device under typical pulse conditions are predicted, including the damage location, damage power, etc. By the injection effect test and device microanatomy analysis through using scanning electron microscope (SEM) and energy dispersive spectrometer (EDS), it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage, especially the side below the gate near the source. The damage power in the injection test is about 40 dBm and in good agreement with the simulation result. This work has a certain reference value for microwave damage assessment of pHEMT.

Key words: high power microwave, pseudomorphic high electron mobility transistor, damage mechanism, C band, low noise amplifier (LNA)

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇). C band microwave damage characteristics of pseudomorphic high electron mobility transistor[J]. 中国物理B, 2021, 30(9): 98502-098502.

参考文献

[1] Backstrom M G and Lovstrand K G 2004 IEEE Trans. Electromagn. Campat. 46 396
[2] MÅnsson D, Thottappillil R, Nilsson T, LundÉn O and BÄckstrÖm M 2008 IEEE Trans. Electromagn. Campat. 50 434
[3] Kim K and Iliadis A A 2010 Solid-State Electron. 54 18
[4] Ren Z, Yin W Y, Shi Y B and Liu Q H 2010 IEEE Trans. Electron Dev. 57 345
[5] Li H, Chai C C, Liu Y Q, Wu H and Yang Y T 2018 Chin. Phys. B 27 088502
[6] Yu X H, Chai C C, Liu Y, Yang Y T and Xi X W 2015 Chin. Phys. B 24 048502
[7] Sangwan V, Kapoor D, Tan C M, Lin C H and Chiu H C 2019 IEEE Trans. Electromagn. Campat. 61 564
[8] Zhang J, Jin Z X, Yang J H, Zhong H H, Shu T, Zhang J D, Qian B L, Yuan C W, Li Z Q, Fan Y W, Zhou S Y and Xu L R 2011 IEEE Trans. Plasma Sci. 39 1438
[9] Fan Y W, Zhong H H, Li Z Q, Shu T, Zhang J D, Liu J L, Yang J H, Zhang J, Yuan C W and Luo L 2008 Rev. Sci. Instrum. 79 034703
[10] Zhang C B, Wang H G, Zhang J D, Du G X and Yang J 2014 IEEE Trans. Electromagn. Campat. 56 1545
[11] Liu Y, Chai C C, Fan Q Y, Shi C L, Xi X W, Yu X H and Yang Y T 2016 Microelectron. Reliab. 66 32
[12] Liu Y, Chai C C, Yang Y T, Sun J and Li Z P 2016 Chin. Phys. B 25 048504
[13] Yu X H, Ma Z Y, Chai C C, Shi C L and Wang P 2020 IEEE Trans. Electromagn. Campat. 62 101
[14] Xi X W, Chai C C, Zhao G, Yang Y T, Yu X H and Liu Y 2016 Chin. Phys. B 25 048503
[15] Zhou L, San Z W, Hua Y J, Lin L, Zhang S, Zhao Z G, Zhou H J and Yin W Y 2017 IEEE Trans. Electromagn. Campat. 59 902
[16] Tong Z H, Ding P, Su Y B, Wang D H and Jin Z 2021 Chin. Phys. B 30 018501
[17] Integrated Systems Engineering AG 2004 ISE-TCAD Dessis Simulation User's Manual (Zurich: Switzerland) p. 195
[18] Li Y, Chai C C, Liu Y Q, Li Y, Wu H, Zhang W, Li F X and Yang Y T 2019 IEICE Electron. Express 16 20190498
[19] Zhang C B, Wang H G, Zhang J D and Du G X 2015 IEEE Trans. Electromagn. Campat. 57 1132
[20] Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C and Hao Y 2014 Chin. Phys. B 23 097307
[21] Wunsch D C and Bell R R 1968 IEEE Trans. Nucl. Sci. 15 244
[22] Tasca D M 1970 IEEE Trans. Nucl. Sci. 17 364

C band microwave damage characteristics of pseudomorphic high electron mobility transistor

C band microwave damage characteristics of pseudomorphic high electron mobility transistor

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