One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range

doi:10.1088/1674-1056/ab4d46

摘要/Abstract

摘要： Optical features of a semiconductor-dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO₂/InSb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers' induced mode(s) are discussed by taking into consideration of the temperature dependence of the InSb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts.

关键词: photonic band gap, photonic crystal, semiconductor layer, defect mode

Abstract: Optical features of a semiconductor-dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO₂/InSb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers' induced mode(s) are discussed by taking into consideration of the temperature dependence of the InSb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts.

Key words: photonic band gap, photonic crystal, semiconductor layer, defect mode

中图分类号: (Photonic bandgap materials)

42.70.Qs

78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)

Sepehr Razi, Fatemeh Ghasemi. One-dimensional structure made of periodic slabs of SiO₂/InSb offering tunable wide band gap at terahertz frequency range[J]. 中国物理B, 2019, 28(12): 124205-124205.

Sepehr Razi, Fatemeh Ghasemi. One-dimensional structure made of periodic slabs of SiO₂/InSb offering tunable wide band gap at terahertz frequency range[J]. Chin. Phys. B, 2019, 28(12): 124205-124205.

参考文献 41

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One-dimensional structure made of periodic slabs of SiO₂/InSb offering tunable wide band gap at terahertz frequency range

One-dimensional structure made of periodic slabs of SiO₂/InSb offering tunable wide band gap at terahertz frequency range

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