C band microwave damage characteristics of pseudomorphic high electron mobility transistor
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇)
C band microwave damage characteristics of pseudomorphic high electron mobility transistor
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇)
中国物理B
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2021, (9): 98502
-098502
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DOI: 10.1088/1674-1056/abf135