Strain-dependent resistance and giant gauge factor in monolayer WSe2

doi:10.1088/1674-1056/ac11d2

中国物理B ›› 2021, Vol. 30 ›› Issue (9): 97203-097203.doi: 10.1088/1674-1056/ac11d2

Strain-dependent resistance and giant gauge factor in monolayer WSe₂

Mao-Sen Qin(秦茂森), Xing-Guo Ye(叶兴国), Peng-Fei Zhu(朱鹏飞), Wen-Zheng Xu(徐文正), Jing Liang(梁晶), Kaihui Liu(刘开辉), and Zhi-Min Liao(廖志敏)^†

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

收稿日期:2021-06-19 修回日期:2021-06-28 接受日期:2021-07-07 出版日期:2021-08-19 发布日期:2021-08-19
通讯作者: Zhi-Min Liao E-mail:liaozm@pku.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0703703) and the National Natural Science Foundation of China (Grant Nos. 91964201, 61825401, and 11774004).

Strain-dependent resistance and giant gauge factor in monolayer WSe₂

Mao-Sen Qin(秦茂森), Xing-Guo Ye(叶兴国), Peng-Fei Zhu(朱鹏飞), Wen-Zheng Xu(徐文正), Jing Liang(梁晶), Kaihui Liu(刘开辉), and Zhi-Min Liao(廖志敏)^†

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

Received:2021-06-19 Revised:2021-06-28 Accepted:2021-07-07 Online:2021-08-19 Published:2021-08-19
Contact: Zhi-Min Liao E-mail:liaozm@pku.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0703703) and the National Natural Science Foundation of China (Grant Nos. 91964201, 61825401, and 11774004).

摘要/Abstract

摘要： We report the strong dependence of resistance on uniaxial strain in monolayer WSe₂ at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe₂ potential for application in the highly sensitive strain sensors and high-performance flexible electronics.

关键词: strain engineering, van der Waals materials, symmetry breaking, orbital magnetization, Berry curvature

Abstract: We report the strong dependence of resistance on uniaxial strain in monolayer WSe₂ at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe₂ potential for application in the highly sensitive strain sensors and high-performance flexible electronics.

Key words: strain engineering, van der Waals materials, symmetry breaking, orbital magnetization, Berry curvature

中图分类号: (Low-field transport and mobility; piezoresistance)

72.20.Fr

72.15.Qm (Scattering mechanisms and Kondo effect) 73.63.-b (Electronic transport in nanoscale materials and structures) 75.25.Dk (Orbital, charge, and other orders, including coupling of these orders)

Mao-Sen Qin(秦茂森), Xing-Guo Ye(叶兴国), Peng-Fei Zhu(朱鹏飞), Wen-Zheng Xu(徐文正), Jing Liang(梁晶), Kaihui Liu(刘开辉), and Zhi-Min Liao(廖志敏). Strain-dependent resistance and giant gauge factor in monolayer WSe₂[J]. 中国物理B, 2021, 30(9): 97203-097203.

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Strain-dependent resistance and giant gauge factor in monolayer WSe₂

Strain-dependent resistance and giant gauge factor in monolayer WSe₂

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