中国物理B ›› 2021, Vol. 30 ›› Issue (8): 86801-086801.doi: 10.1088/1674-1056/abe22d

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Effect of Mo doping on phase change performance of Sb2Te3

Wan-Liang Liu(刘万良)1,2, Ying Chen(陈莹)1,2, Tao Li(李涛)1,2, Zhi-Tang Song(宋志棠)1, and Liang-Cai Wu(吴良才)3,4,†   

  1. 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 College of Science, Donghua University, Shanghai 201620, China;
    4 Member of Magnetic Confinement Fusion Research Center, Ministry of Education, China
  • 收稿日期:2020-12-15 修回日期:2021-01-28 接受日期:2021-02-02 出版日期:2021-07-16 发布日期:2021-08-02
  • 通讯作者: Liang-Cai Wu E-mail:lcwu@dhu.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0701703 and 2017YFA0206101), the National Natural Science Foundation of China (Grant No. 61874151), and the Science and Technology Council of Shanghai, China (Grant Nos. 19JC1416801 and 19JC1416802).

Effect of Mo doping on phase change performance of Sb2Te3

Wan-Liang Liu(刘万良)1,2, Ying Chen(陈莹)1,2, Tao Li(李涛)1,2, Zhi-Tang Song(宋志棠)1, and Liang-Cai Wu(吴良才)3,4,†   

  1. 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 College of Science, Donghua University, Shanghai 201620, China;
    4 Member of Magnetic Confinement Fusion Research Center, Ministry of Education, China
  • Received:2020-12-15 Revised:2021-01-28 Accepted:2021-02-02 Online:2021-07-16 Published:2021-08-02
  • Contact: Liang-Cai Wu E-mail:lcwu@dhu.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0701703 and 2017YFA0206101), the National Natural Science Foundation of China (Grant No. 61874151), and the Science and Technology Council of Shanghai, China (Grant Nos. 19JC1416801 and 19JC1416802).

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摘要： Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 ℃. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4×105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.

关键词: phase-change memory, Sb2Te3, thin films, nanocomposites

Abstract: Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 ℃. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4×105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.

Key words: phase-change memory, Sb2Te3, thin films, nanocomposites

中图分类号:  (Metals and alloys)

  • 68.35.bd
68.37.Yz (X-ray microscopy) 68.60.Dv (Thermal stability; thermal effects)