中国物理B ›› 2021, Vol. 30 ›› Issue (6): 67307-067307.doi: 10.1088/1674-1056/abee6c

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Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films

Qi-Xun Guo(郭奇勋)1,2,†, Zhong-Xu Ren(任中旭)1,†, Yi-Ya Huang(黄意雅)1, Zhi-Chao Zheng(郑志超)1, Xue-Min Wang(王学敏)2, Wei He(何为)3, Zhen-Dong Zhu(朱振东)4,‡, and Jiao Teng(滕蛟)1,§   

  1. 1 Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China;
    2 Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology Beijing, Beijing 100083, China;
    3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    4 National Institute of Metrology, Beijing 100029, China
  • 收稿日期:2021-02-09 修回日期:2021-03-10 接受日期:2021-03-15 出版日期:2021-05-18 发布日期:2021-06-05
  • 通讯作者: Zhen-Dong Zhu, Jiao Teng E-mail:zd_tsu@163.com;tengjiao@mater.ustb.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52072030, 52071025, and 51871018), the Beijing Outstanding Young Scientists Projects (Grant No. BJJWZYJH01201910005018), Beijing Natural Science Foundation, China (Grant No. Z180014), the Science and Technology Innovation Team Program of Foshan (Grant No. FSOAA-KJ919-4402-0087), and Beijing Laboratory of Metallic Materials and Processing for Modern Transportation.

Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films

Qi-Xun Guo(郭奇勋)1,2,†, Zhong-Xu Ren(任中旭)1,†, Yi-Ya Huang(黄意雅)1, Zhi-Chao Zheng(郑志超)1, Xue-Min Wang(王学敏)2, Wei He(何为)3, Zhen-Dong Zhu(朱振东)4,‡, and Jiao Teng(滕蛟)1,§   

  1. 1 Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China;
    2 Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology Beijing, Beijing 100083, China;
    3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    4 National Institute of Metrology, Beijing 100029, China
  • Received:2021-02-09 Revised:2021-03-10 Accepted:2021-03-15 Online:2021-05-18 Published:2021-06-05
  • Contact: Zhen-Dong Zhu, Jiao Teng E-mail:zd_tsu@163.com;tengjiao@mater.ustb.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52072030, 52071025, and 51871018), the Beijing Outstanding Young Scientists Projects (Grant No. BJJWZYJH01201910005018), Beijing Natural Science Foundation, China (Grant No. Z180014), the Science and Technology Innovation Team Program of Foshan (Grant No. FSOAA-KJ919-4402-0087), and Beijing Laboratory of Metallic Materials and Processing for Modern Transportation.

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摘要： A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi2Te3 films with the carrier density down to 4.0×1013 cm-2. In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi2Te3 thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi2Te3 thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length (~228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi2Te3 thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.

关键词: topological insulator, magnetron sputtering, post annealing, Kiessig fringes, low carrier density, weak antilocalization

Abstract: A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi2Te3 films with the carrier density down to 4.0×1013 cm-2. In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi2Te3 thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi2Te3 thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length (~228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi2Te3 thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.

Key words: topological insulator, magnetron sputtering, post annealing, Kiessig fringes, low carrier density, weak antilocalization

中图分类号:  (Electronic transport phenomena in thin films)

  • 73.50.-h
72.15.Rn (Localization effects (Anderson or weak localization)) 73.20.Fz (Weak or Anderson localization)