中国物理B ›› 2021, Vol. 30 ›› Issue (5): 56104-056104.doi: 10.1088/1674-1056/abd76a

所属专题： SPECIAL TOPIC — Ion beam modification of materials and applications

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Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

Lijie Huang(黄黎杰)1,7, Lin Li(李琳)2,3, Zhen Shang(尚震)2, Mao Wang(王茂)2, Junjie Kang(康俊杰)1, Wei Luo(罗巍)1, Zhiwen Liang(梁智文)5, Slawomir Prucnal2, Ulrich Kentsch2, Yanda Ji(吉彦达)4, Fabi Zhang(张法碧)7, Qi Wang(王琦)5, Ye Yuan(袁冶)1,†, Qian Sun(孙钱)6, Shengqiang Zhou(周生强)2, and Xinqiang Wang(王新强)1,5   

  1. 1 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    2 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01314, Dresden, Germany;
    3 College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China;
    4 Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
    5 Dongguan Institute of Optoelectronics, Peking University, Dongguan 523808, China;
    6 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
    7 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • 收稿日期:2020-11-10 修回日期:2020-12-27 接受日期:2020-12-30 出版日期:2021-05-14 发布日期:2021-05-14
  • 通讯作者: Ye Yuan E-mail:yuanye@sslab.org.cn
  • 基金资助:
    Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2019B010132001, 2020B010174003, and 2019B121204004), the Basic and Application Basic Research Foundation of Guangdong Province, China (Grant Nos. 2020A1515110891 and 2019A1515111053), and the Fund from the Ion Beam Center (IBC) at HZDR.

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

Lijie Huang(黄黎杰)1,7, Lin Li(李琳)2,3, Zhen Shang(尚震)2, Mao Wang(王茂)2, Junjie Kang(康俊杰)1, Wei Luo(罗巍)1, Zhiwen Liang(梁智文)5, Slawomir Prucnal2, Ulrich Kentsch2, Yanda Ji(吉彦达)4, Fabi Zhang(张法碧)7, Qi Wang(王琦)5, Ye Yuan(袁冶)1,†, Qian Sun(孙钱)6, Shengqiang Zhou(周生强)2, and Xinqiang Wang(王新强)1,5   

  1. 1 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    2 Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01314, Dresden, Germany;
    3 College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China;
    4 Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
    5 Dongguan Institute of Optoelectronics, Peking University, Dongguan 523808, China;
    6 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
    7 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  • Received:2020-11-10 Revised:2020-12-27 Accepted:2020-12-30 Online:2021-05-14 Published:2021-05-14
  • Contact: Ye Yuan E-mail:yuanye@sslab.org.cn
  • Supported by:
    Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2019B010132001, 2020B010174003, and 2019B121204004), the Basic and Application Basic Research Foundation of Guangdong Province, China (Grant Nos. 2020A1515110891 and 2019A1515111053), and the Fund from the Ion Beam Center (IBC) at HZDR.

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摘要： We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×1013 cm-2 to 5×1015 cm-2, the n-type dopant concentration gradually increases from 4.6×1018 cm-2 to 4.5×1020 cm-2, while the generated vacancy density accordingly raises from 3.7×1013 cm-2 to 3.8×1015 cm-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×1015 cm-2, which ceases at the overdose of 5×1015 cm-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.

关键词: ion implantation, GaN, defects

Abstract: We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×1013 cm-2 to 5×1015 cm-2, the n-type dopant concentration gradually increases from 4.6×1018 cm-2 to 4.5×1020 cm-2, while the generated vacancy density accordingly raises from 3.7×1013 cm-2 to 3.8×1015 cm-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×1015 cm-2, which ceases at the overdose of 5×1015 cm-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.

Key words: ion implantation, GaN, defects

中图分类号:  (III-V and II-VI semiconductors)

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