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Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛). Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6[J]. 中国物理B, 2023, 32(3): 37802-037802. |
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Chao Li(李超), De-Long Xu(徐德龙), Wen-Quan Xie(谢文泉), Xian-Hui Zhang(张先徽), and Si-Ze Yang(杨思泽). Increasing the ·OH radical concentration synergistically with plasma electrolysis and ultrasound in aqueous DMSO solution[J]. 中国物理B, 2022, 31(4): 48706-048706. |
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Lingyan Lu(卢玲燕), Han Zhang(张涵), Xiaowei Wu(吴晓维), Jing Shi(石晶), and Yi-Yang Sun(孙宜阳). Atomic and electronic structures of p-type dopants in 4H-SiC[J]. 中国物理B, 2021, 30(9): 96806-096806. |
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Bo Chen(陈波), Xiang-Qian Li(李向前), Lin Xue(薛林), Yan Han(韩燕), Zhi Yang(杨致), and Long-Long Zhang(张龙龙). First-principles investigation of the valley and electrical properties of carbon-doped α-graphyne-like BN sheet[J]. 中国物理B, 2021, 30(5): 57101-057101. |
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Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青). Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor[J]. 中国物理B, 2021, 30(5): 58102-058102. |
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Muhammad Rashid, Jamil M, Mahmood Q, Shahid M Ramay, Asif Mahmood A, and Ghaithan H M. Ab-initio calculations of bandgap tuning of In1-xGaxY (Y = N, P) alloys for optoelectronic applications[J]. 中国物理B, 2021, 30(11): 116301-116301. |
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Qing-Tao Xia(夏清涛), Zhao-Hui Li(李召辉), Le-Qing Zhang(张乐清), Feng-Ling Zhang(张凤玲), Xiang-Kun Li(李祥琨), Heng-Jun Liu(刘恒均), Fang-Chao Gu(顾方超), Tao Zhang(张涛), Qiang Li(李强), and Qing-Hao Li(李庆浩). Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films[J]. 中国物理B, 2021, 30(11): 117701-117701. |
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林龙, 郭义鹏, 何朝政, 陶华龙, 黄敬涛, 余伟阳, 陈瑞欣, 娄梦思, 闫龙斌. First-principles study of magnetism of 3d transition metals and nitrogen co-doped monolayer MoS2[J]. 中国物理B, 2020, 29(9): 97102-097102. |
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朱震, 董宝娟, 郭怀红, 杨腾, 张志东. Fundamental band gap and alignment of two-dimensional semiconductors explored by machine learning[J]. 中国物理B, 2020, 29(4): 46101-046101. |
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李小丽, 许小红. Homogeneous and inhomogeneous magnetic oxide semiconductors[J]. 中国物理B, 2019, 28(9): 98506-098506. |
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杨竞秀, 魏苏淮. First-principles study of the band gap tuning and doping control in CdSexTe1-x alloy for high efficiency solar cell[J]. 中国物理B, 2019, 28(8): 86106-086106. |
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张皓然, 张琪, 张茜, 孙汇智, 海港, 仝静, 徐浩文, 夏瑞东. Polarized red, green, and blue light emitting diodes fabricated with identical device configuration using rubbed PEDOT:PSS as alignment layer[J]. 中国物理B, 2019, 28(7): 78108-078108. |
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郭胜利, 宁凡龙. Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors[J]. 中国物理B, 2018, 27(9): 97502-097502. |
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Q Mahmood,M Yaseen,M Hassan,Shahid M Ramay,Asif Mahmood. Theoretical investigation of optical properties and band gap engineering for Zn1-xTMxTe(TM=Fe, Co) alloys by modified Becke—Johnson potential[J]. 中国物理B, 2017, 26(8): 87803-087803. |
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Kulwinder Kaur,Ranjan Kumar. Unraveling the effect of uniaxial strain on thermoelectric properties of Mg2Si: A density functional theory study[J]. 中国物理B, 2017, 26(6): 66401-066401. |