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Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂). SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current[J]. 中国物理B, 2023, 32(4): 47702-047702. |
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Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会). A 4H-SiC trench IGBT with controllable hole-extracting path for low loss[J]. 中国物理B, 2023, 32(4): 48503-048503. |
[3] |
Jinlong Hu(胡锦龙), Yuting Zuo(左钰婷), Yuzhou Hao(郝昱州), Guoyu Shu(舒国钰), Yang Wang(王洋), Minxuan Feng(冯敏轩), Xuejie Li(李雪洁), Xiaoying Wang(王晓莹), Jun Sun(孙军), Xiangdong Ding(丁向东), Zhibin Gao(高志斌), Guimei Zhu(朱桂妹), Baowen Li(李保文). Prediction of lattice thermal conductivity with two-stage interpretable machine learning[J]. 中国物理B, 2023, 32(4): 46301-046301. |
[4] |
Keyi Peng(彭珂依), Jing Yue(岳靖), Wen Zhang(张文), and Jian Li(李剑). Meshfree-based physics-informed neural networks for the unsteady Oseen equations[J]. 中国物理B, 2023, 32(4): 40208-040208. |
[5] |
Wen-Hong Ouyang(欧阳文泓), Jian-Bo Liu(刘剑波), Wen-Sheng Lai(赖文生),Jia-Hao Li(李家好), and Bai-Xin Liu(柳百新). Atomic simulations of primary irradiation damage in U-Mo-Xe system[J]. 中国物理B, 2023, 32(3): 36101-036101. |
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Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502. |
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Chun-Sheng Hu(胡春生), Yun-Jing Wu(仵允京), Yuan-Shuo Liu(刘元硕), Shuai Fu(傅帅),Xiao-Ning Cui(崔晓宁), Yi-Hao Wang(王易昊), and Chang-Wen Zhang(张昌文). Single-layer intrinsic 2H-phase LuX2 (X = Cl, Br, I) with large valley polarization and anomalous valley Hall effect[J]. 中国物理B, 2023, 32(3): 37306-037306. |
[8] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
[9] |
Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏). High performance SiC trench-type MOSFET with an integrated MOS-channel diode[J]. 中国物理B, 2023, 32(2): 28503-028503. |
[10] |
Xin Wang(王鑫), Xiang-Qin Li(李香琴), Tian-Qing Liu(刘天庆), Li-Dan Zhao(赵丽丹), Ke-Dong Song(宋克东), and Dan Ge(葛丹). Molecular dynamics simulation of interaction between nanorod and phospholipid molecules bilayer[J]. 中国物理B, 2023, 32(1): 16201-016201. |
[11] |
Xiaojie Guo(郭晓杰), Lijuan Chen(陈丽娟), Zeliang Gao(高泽亮), Xin Yin(尹鑫), and Xutang Tao(陶绪堂). Definition and expression of non-symmetric physical properties in space for uniaxial crystals[J]. 中国物理B, 2022, 31(9): 96103-096103. |
[12] |
Qiang-Tao Sui(随强涛) and Xiang-Gang Qui(邱祥冈). Josephson vortices and intrinsic Josephson junctions in the layered iron-based superconductor Ca10(Pt3As8)((Fe0.9Pt0.1)2As2)5[J]. 中国物理B, 2022, 31(9): 97403-097403. |
[13] |
Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502. |
[14] |
Jia-Rong Ye(叶家容), Wei-Shen Huang(黄伟深), and Xiu-Jun Fu(傅秀军). Substitutions of vertex configuration of Ammann-Beenker tiling in framework of Ammann lines[J]. 中国物理B, 2022, 31(8): 86101-086101. |
[15] |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |