›› 2015, Vol. 24 ›› Issue (3): 37803-037803.doi: 10.1088/1674-1056/24/3/037803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of helium implantation on SiC and graphite

郭洪燕a b, 葛昌纯a b, 夏敏b, 郭立平c, 陈济鸿c, 燕青芝b   

  1. a Institute of Powder Metallurgy and Advanced Ceramics, Southwest Jiaotong University, Chengdu 610031, China;
    b Institute of Nuclear Materials, University of Science and Technology Beijing, Beijing 100083, China;
    c School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • 收稿日期:2014-12-06 修回日期:2014-12-19 出版日期:2015-03-05 发布日期:2015-03-05
  • 基金资助:
    Project supported by the ITER-National Magnetic Confinement Fusion Program, China (Grant Nos. 2010GB109000, 2011GB108009, and 2014GB123000) and the National Natural Science Foundation of China (Grant No. 11075119).{These authors contributed equally to this work.

Effect of helium implantation on SiC and graphite

Guo Hong-Yan (郭洪燕)a b, Ge Chang-Chun (葛昌纯)a b, Xia Min (夏敏)b, Guo Li-Ping (郭立平)c, Chen Ji-Hong (陈济鸿)c, Yan Qing-Zhi (燕青芝)b   

  1. a Institute of Powder Metallurgy and Advanced Ceramics, Southwest Jiaotong University, Chengdu 610031, China;
    b Institute of Nuclear Materials, University of Science and Technology Beijing, Beijing 100083, China;
    c School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • Received:2014-12-06 Revised:2014-12-19 Online:2015-03-05 Published:2015-03-05
  • Contact: Ge Chang-Chun, Xia Min E-mail:ccge@mater.ustb.edu.cn;xmdsg@126.com
  • Supported by:
    Project supported by the ITER-National Magnetic Confinement Fusion Program, China (Grant Nos. 2010GB109000, 2011GB108009, and 2014GB123000) and the National Natural Science Foundation of China (Grant No. 11075119).{These authors contributed equally to this work.

RichHTML

2

PDF (PC)

914

赞

摘要： Effects of helium implantation on silicon carbide (SiC) and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He+ ions of 20 keV and 100 keV at different temperatures and different fluences. The He+ irradiation induced microstructure changes were studied by field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM).

关键词: plasma facing materials, SiC, irradiation damage, fusion reactor

Abstract: Effects of helium implantation on silicon carbide (SiC) and graphite were studied to reveal the possibility of SiC replacing graphite as plasma facing materials. Pressureless sintered SiC and graphite SMF-800 were implanted with He+ ions of 20 keV and 100 keV at different temperatures and different fluences. The He+ irradiation induced microstructure changes were studied by field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM).

Key words: plasma facing materials, SiC, irradiation damage, fusion reactor

中图分类号:  (Interactions of particles and radiation with matter)

  • 78.70.-g
78.90.+t (Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter) 21.90.+f (Other topics in nuclear structure)