Facile and fast growth of high mobility nanoribbons of ZrTe5

doi:10.1088/1674-1056/ab889a

中国物理B ›› 2020, Vol. 29 ›› Issue (6): 68102-068102.doi: 10.1088/1674-1056/ab889a

Facile and fast growth of high mobility nanoribbons of ZrTe₅

Jingyue Wang(王璟岳), Jingjing Niu(牛晶晶), Xinqi Li(李新祺), Xiumei Ma(马秀梅), Yuan Yao(姚湲), Xiaosong Wu(吴孝松)

1 State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China;
2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Frontiers Science Center for Nano-optoelectronics and Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China;
4 Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China

收稿日期:2020-03-09 修回日期:2020-04-02 出版日期:2020-06-05 发布日期:2020-06-05
通讯作者: Xiaosong Wu E-mail:xswu@pku.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0300600, 2016YFA0300802, 2013CB932904, and 2016YFA0202500) and the National Natural Science Foundation of China (Grant Nos. 11574005, 11774009, and 11234001).

Facile and fast growth of high mobility nanoribbons of ZrTe₅

Jingyue Wang(王璟岳)¹, Jingjing Niu(牛晶晶)¹, Xinqi Li(李新祺)¹, Xiumei Ma(马秀梅)¹, Yuan Yao(姚湲)², Xiaosong Wu(吴孝松)^1,3,4

1 State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China;
2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Frontiers Science Center for Nano-optoelectronics and Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China;
4 Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China

Received:2020-03-09 Revised:2020-04-02 Online:2020-06-05 Published:2020-06-05
Contact: Xiaosong Wu E-mail:xswu@pku.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFA0300600, 2016YFA0300802, 2013CB932904, and 2016YFA0202500) and the National Natural Science Foundation of China (Grant Nos. 11574005, 11774009, and 11234001).

摘要/Abstract

摘要： Recently, ZrTe₅ has received a lot of attention as it exhibits various topological phases, such as weak and strong topological insulators, a Dirac semimetal, a three-dimensional quantum Hall state, and a quantum spin Hall insulator in the monolayer limit. While most of studies have been focused on the three-dimensional bulk material, it is highly desired to obtain nanostructured materials due to their advantages in device applications. We report the synthesis and characterizations of ZrTe₅ nanoribbons. Via a silicon-assisted chemical vapor transport method, long nanoribbons with thickness as thin as 20 nm can be grown. The growth rate is over an order of magnitude faster than the previous method for the bulk crystals. Moreover, transport studies show that the nanoribbons are of low unintentional doping and high carrier mobility, over 30000 cm²/V·s, which enable reliable determination of the Berry phase of π in the ac plane from quantum oscillations. Our method holds great potential in growth of high quality ultra-thin nanostructures of ZrTe₅.

关键词: ZrTe₅ nanoribbons, growth, chemical vapor transport, mobility

Abstract: Recently, ZrTe₅ has received a lot of attention as it exhibits various topological phases, such as weak and strong topological insulators, a Dirac semimetal, a three-dimensional quantum Hall state, and a quantum spin Hall insulator in the monolayer limit. While most of studies have been focused on the three-dimensional bulk material, it is highly desired to obtain nanostructured materials due to their advantages in device applications. We report the synthesis and characterizations of ZrTe₅ nanoribbons. Via a silicon-assisted chemical vapor transport method, long nanoribbons with thickness as thin as 20 nm can be grown. The growth rate is over an order of magnitude faster than the previous method for the bulk crystals. Moreover, transport studies show that the nanoribbons are of low unintentional doping and high carrier mobility, over 30000 cm²/V·s, which enable reliable determination of the Berry phase of π in the ac plane from quantum oscillations. Our method holds great potential in growth of high quality ultra-thin nanostructures of ZrTe₅.

Key words: ZrTe₅ nanoribbons, growth, chemical vapor transport, mobility

中图分类号: (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

81.10.-h

73.63.-b (Electronic transport in nanoscale materials and structures) 73.23.-b (Electronic transport in mesoscopic systems)

王璟岳, 牛晶晶, 李新祺, 马秀梅, 姚湲, 吴孝松. Facile and fast growth of high mobility nanoribbons of ZrTe₅[J]. 中国物理B, 2020, 29(6): 68102-068102.

Jingyue Wang(王璟岳), Jingjing Niu(牛晶晶), Xinqi Li(李新祺), Xiumei Ma(马秀梅), Yuan Yao(姚湲), Xiaosong Wu(吴孝松). Facile and fast growth of high mobility nanoribbons of ZrTe₅[J]. Chin. Phys. B, 2020, 29(6): 68102-068102.

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Facile and fast growth of high mobility nanoribbons of ZrTe₅

Facile and fast growth of high mobility nanoribbons of ZrTe₅

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