Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy

doi:10.1088/1674-1056/ab790b

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 46801-046801.doi: 10.1088/1674-1056/ab790b

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy

Yi Wang(王一), Xiang Guo(郭祥), Jiemin Wei(魏节敏), Chen Yang(杨晨), Zijiang Luo(罗子江), Jihong Wang(王继红), Zhao Ding(丁召)

1 College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
2 Power Semiconductor Device Reliability Research Center of the Ministry of Education, Guizhou University, Guiyang 550025, China;
3 Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China;
4 School of Information, Guizhou University of Finance and Economics, Guiyang 550025, China

收稿日期:2020-01-17 修回日期:2020-02-18 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Zhao Ding E-mail:zding@gzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61564002 and 11664005), the Science and Technology Foundation of Guizhou Province, China (Grant No. QKH-[2017]1055), and Guizhou University Talent Foundation (Grant No. GDJHZ-[2015]23).

Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy

Yi Wang(王一)^1,2, Xiang Guo(郭祥)^1,2,3, Jiemin Wei(魏节敏)², Chen Yang(杨晨)^1,3,4, Zijiang Luo(罗子江)^1,4, Jihong Wang(王继红)¹, Zhao Ding(丁召)^1,2,3

1 College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;
2 Power Semiconductor Device Reliability Research Center of the Ministry of Education, Guizhou University, Guiyang 550025, China;
3 Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China;
4 School of Information, Guizhou University of Finance and Economics, Guiyang 550025, China

Received:2020-01-17 Revised:2020-02-18 Online:2020-04-05 Published:2020-04-05
Contact: Zhao Ding E-mail:zding@gzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61564002 and 11664005), the Science and Technology Foundation of Guizhou Province, China (Grant No. QKH-[2017]1055), and Guizhou University Talent Foundation (Grant No. GDJHZ-[2015]23).

摘要/Abstract

摘要： GaAs multiple concentric nano-ring structures (CNRs) are prepared with multistep crystallization procedures by droplets epitaxy on GaAs (001) to explore the influence of different initial crystallization temperatures on CNRs morphology. Atomic force microscope (AFM) images show that GaAs nanostructures are more likely to form elliptical rings due to diffusion anisotropy. Meanwhile, with the increase of initial crystallization temperature, the inner ring height and density of CNRs are increased, and outer rings are harder to form. In addition, the mechanism of formation of CNRs is discussed by classical nucleation theory and diffusion theory. The method can be used to calculate the diffusion activation energy of gallium atoms (0.7±0.1 eV) on the GaAs (001) surface conveniently.

关键词: concentric nano-ring structures, crystallization temperature, activation energy of diffusion

Abstract: GaAs multiple concentric nano-ring structures (CNRs) are prepared with multistep crystallization procedures by droplets epitaxy on GaAs (001) to explore the influence of different initial crystallization temperatures on CNRs morphology. Atomic force microscope (AFM) images show that GaAs nanostructures are more likely to form elliptical rings due to diffusion anisotropy. Meanwhile, with the increase of initial crystallization temperature, the inner ring height and density of CNRs are increased, and outer rings are harder to form. In addition, the mechanism of formation of CNRs is discussed by classical nucleation theory and diffusion theory. The method can be used to calculate the diffusion activation energy of gallium atoms (0.7±0.1 eV) on the GaAs (001) surface conveniently.

Key words: concentric nano-ring structures, crystallization temperature, activation energy of diffusion

中图分类号: (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

68.65.-k

61.46.-w (Structure of nanoscale materials) 65.40.gp (Surface energy) 81.10.Pq (Growth in vacuum)

王一, 郭祥, 魏节敏, 杨晨, 罗子江, 王继红, 丁召. Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy[J]. 中国物理B, 2020, 29(4): 46801-046801.

Yi Wang(王一), Xiang Guo(郭祥), Jiemin Wei(魏节敏), Chen Yang(杨晨), Zijiang Luo(罗子江), Jihong Wang(王继红), Zhao Ding(丁召). Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy[J]. Chin. Phys. B, 2020, 29(4): 46801-046801.

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Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy

Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy

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