中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47501-047501.doi: 10.1088/1674-1056/ab7800

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging

Jingyuan Zhu(朱静远), Sichao Zhang(张思超), Shanshan Xie(谢珊珊), Chen Xu(徐晨), Lijuan Zhang(张丽娟), Xulei Tao(陶旭磊), Yuqi Ren(任玉琦), Yudan Wang(王玉丹), Biao Deng(邓彪), Renzhong Tai(邰仁忠), Yifang Chen(陈宜方)   

  1. 1 Nanolithography and Application Research Group, State Key Laboratory of Asic and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
    2 Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
  • 收稿日期:2019-12-12 修回日期:2020-02-12 出版日期:2020-04-05 发布日期:2020-04-05
  • 通讯作者: Yifang Chen E-mail:yifangchen@fudan.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. U1732104), China Postdoctoral Science Foundation (Grant No. 2017M611443), and Shanghai STCSM2019-11-20 Grant, China (Grant No. 19142202700).

Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging

Jingyuan Zhu(朱静远)1, Sichao Zhang(张思超)1, Shanshan Xie(谢珊珊)1, Chen Xu(徐晨)1, Lijuan Zhang(张丽娟)2, Xulei Tao(陶旭磊)2, Yuqi Ren(任玉琦)2, Yudan Wang(王玉丹)2, Biao Deng(邓彪)2, Renzhong Tai(邰仁忠)2, Yifang Chen(陈宜方)1   

  1. 1 Nanolithography and Application Research Group, State Key Laboratory of Asic and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
    2 Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
  • Received:2019-12-12 Revised:2020-02-12 Online:2020-04-05 Published:2020-04-05
  • Contact: Yifang Chen E-mail:yifangchen@fudan.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. U1732104), China Postdoctoral Science Foundation (Grant No. 2017M611443), and Shanghai STCSM2019-11-20 Grant, China (Grant No. 19142202700).

摘要:

High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology. When the outmost zone-width is shrinking down to 50 nm or even below, patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect. The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction (PEC), because of the large variety in the line width. This work develops a new strategy, nicknamed as local proximity effect correction (LPEC), efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction. By this way, 50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated. Their imaging capability in soft (1.3 keV) and hard (9 keV) x-ray, respectively, has been demonstrated in Shanghai Synchrotron Radiation Facility (SSRF) with the resolution of 50 nm. The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.

关键词: Fresnel zone plates, electron beam lithography, local proximity effect correction, x-ray imaging, 50 nm resolution

Abstract:

High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology. When the outmost zone-width is shrinking down to 50 nm or even below, patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect. The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction (PEC), because of the large variety in the line width. This work develops a new strategy, nicknamed as local proximity effect correction (LPEC), efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction. By this way, 50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated. Their imaging capability in soft (1.3 keV) and hard (9 keV) x-ray, respectively, has been demonstrated in Shanghai Synchrotron Radiation Facility (SSRF) with the resolution of 50 nm. The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.

Key words: Fresnel zone plates, electron beam lithography, local proximity effect correction, x-ray imaging, 50 nm resolution

中图分类号:  (Fabrication of magnetic nanostructures)

  • 75.75.Cd
07.85.-m (X- and γ-ray instruments) 41.50.+h (X-ray beams and x-ray optics)