A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

doi:10.1088/1674-1056/ab6969

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38504-038504.doi: 10.1088/1674-1056/ab6969

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

Xuan-Zhang Li(李炫璋), Ling Sun(孙令), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Chen Yue(岳琛), Li-Li Xie(谢莉莉), Wen-Xin Wang(王文新), Hong Chen(陈弘), Hai-Qiang Jia(贾海强), Lu Wang(王禄)

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Detector Technology Laboratory, Beijing Institute of Space Mechanics&Electricity, Beijing 100076, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2019-11-25 修回日期:2019-12-27 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Lu Wang E-mail:lwang@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205), the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission of China (Grant No. Z151100003515001), and the National Key Technology R&D Program of China (Grant No. 2016YFB0400302).

A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

Xuan-Zhang Li(李炫璋)^1,2, Ling Sun(孙令)^1,2, Jin-Lei Lu(鲁金蕾)^1,2, Jie Liu(刘洁)^1,2, Chen Yue(岳琛)^1,2, Li-Li Xie(谢莉莉)³, Wen-Xin Wang(王文新)¹, Hong Chen(陈弘)^1,4, Hai-Qiang Jia(贾海强)^1,4, Lu Wang(王禄)¹

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Detector Technology Laboratory, Beijing Institute of Space Mechanics&Electricity, Beijing 100076, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2019-11-25 Revised:2019-12-27 Online:2020-03-05 Published:2020-03-05
Contact: Lu Wang E-mail:lwang@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205), the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission of China (Grant No. Z151100003515001), and the National Key Technology R&D Program of China (Grant No. 2016YFB0400302).

摘要/Abstract

摘要： We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified InAsSb quantum well, GaSb is replaced with AlSb/AlGaSb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.

关键词: photodetector, energy band calculation, InAsSb/AlSb/AlGaSb quantum well, interband transition

Abstract: We present a method to extend the operating wavelength of the interband transition quantum well photodetector from an extended short-wavelength infrared region to a middle-wavelength infrared region. In the modified InAsSb quantum well, GaSb is replaced with AlSb/AlGaSb, the valence band of the barrier material is lowered, the first restricted energy level is higher than the valence band of the barrier material, the energy band structure forms type-II structure. The photocurrent spectrum manifest that the fabricated photodetector exhibits a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.

Key words: photodetector, energy band calculation, InAsSb/AlSb/AlGaSb quantum well, interband transition

中图分类号: (III-V semiconductors)

81.05.Ea

85.30.De (Semiconductor-device characterization, design, and modeling) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.60.Bt (Optoelectronic device characterization, design, and modeling)

李炫璋, 孙令, 鲁金蕾, 刘洁, 岳琛, 谢莉莉, 王文新, 陈弘, 贾海强, 王禄. A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector[J]. 中国物理B, 2020, 29(3): 38504-038504.

Xuan-Zhang Li(李炫璋), Ling Sun(孙令), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Chen Yue(岳琛), Li-Li Xie(谢莉莉), Wen-Xin Wang(王文新), Hong Chen(陈弘), Hai-Qiang Jia(贾海强), Lu Wang(王禄). A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector[J]. Chin. Phys. B, 2020, 29(3): 38504-038504.

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A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

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