Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

doi:10.1088/1674-1056/ab6966

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38505-038505.doi: 10.1088/1674-1056/ab6966

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦)

Institute of Microelectronics, Peking University, Beijing 100871, China

收稿日期:2019-11-13 修回日期:2019-12-24 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Peng-Ying Chang, Xiao-Yan Liu E-mail:pychang@pku.edu.cn;xyliu@ime.pku.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017).

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦)

Institute of Microelectronics, Peking University, Beijing 100871, China

Received:2019-11-13 Revised:2019-12-24 Online:2020-03-05 Published:2020-03-05
Contact: Peng-Ying Chang, Xiao-Yan Liu E-mail:pychang@pku.edu.cn;xyliu@ime.pku.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017).

摘要/Abstract

摘要： The impacts of remote Coulomb scattering (RCS) on hole mobility in ultra-thin body silicon-on-insulator (UTB SOI) p-MOSFETs at cryogenic temperatures are investigated. The physical models including phonon scattering, surface roughness scattering, and remote Coulomb scatterings are considered, and the results are verified by the experimental results at different temperatures for both bulk (from 300 K to 30 K) and UTB SOI (300 K and 25 K) p-MOSFETs. The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature (4.2 K). The results reveal that as the temperature decreases, the RCS due to the interfacial trap charges plays an important role in the hole mobility.

关键词: remote Coulomb scattering, hole mobility, cryogenic temperatures, UTB SOI p-MOSFETs

Abstract: The impacts of remote Coulomb scattering (RCS) on hole mobility in ultra-thin body silicon-on-insulator (UTB SOI) p-MOSFETs at cryogenic temperatures are investigated. The physical models including phonon scattering, surface roughness scattering, and remote Coulomb scatterings are considered, and the results are verified by the experimental results at different temperatures for both bulk (from 300 K to 30 K) and UTB SOI (300 K and 25 K) p-MOSFETs. The impacts of the interfacial trap charges at both front and bottom interfaces on the hole mobility are mainly evaluated for the UTB SOI p-MOSFETs at liquid helium temperature (4.2 K). The results reveal that as the temperature decreases, the RCS due to the interfacial trap charges plays an important role in the hole mobility.

Key words: remote Coulomb scattering, hole mobility, cryogenic temperatures, UTB SOI p-MOSFETs

中图分类号: (Field effect devices)

85.30.Tv

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

张先乐, 常鹏鹰, 杜刚, 刘晓彦. Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs[J]. 中国物理B, 2020, 29(3): 38505-038505.

Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦). Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs[J]. Chin. Phys. B, 2020, 29(3): 38505-038505.

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Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs

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