中国物理B ›› 2019, Vol. 28 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/ab4e84

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

Yue Zhao(赵越), Nan Wang(王楠), Kai Yu(余凯), Xiaoming Zhang(张晓明), Xiuli Li(李秀丽), Jun Zheng(郑军), Chunlai Xue(薛春来), Buwen Cheng(成步文), Chuanbo Li(李传波)   

  1. 1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 School of Science, Minzu University of China, Beijing 100081, China;
    4 Optoelectronics Research Center, Minzu University of China, Beijing 100081, China
  • 收稿日期:2019-09-04 修回日期:2019-09-27 出版日期:2019-12-05 发布日期:2019-12-05
  • 通讯作者: Chuanbo Li E-mail:cbli@muc.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

Yue Zhao(赵越)1,2, Nan Wang(王楠)1,2, Kai Yu(余凯)1,2, Xiaoming Zhang(张晓明)3, Xiuli Li(李秀丽)1,2, Jun Zheng(郑军)1,2, Chunlai Xue(薛春来)1,2, Buwen Cheng(成步文)1,2, Chuanbo Li(李传波)3,4   

  1. 1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 School of Science, Minzu University of China, Beijing 100081, China;
    4 Optoelectronics Research Center, Minzu University of China, Beijing 100081, China
  • Received:2019-09-04 Revised:2019-09-27 Online:2019-12-05 Published:2019-12-05
  • Contact: Chuanbo Li E-mail:cbli@muc.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

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摘要： An investigation of germanium-tin (GeSn) on silicon p-i-n photodetectors with a high-quality Ge0.94Sn0.06 absorbing layer is reported. The GeSn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature. Furthermore, the GeSn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.

关键词: GeSn alloy, molecular beam epitaxy, photodetector, cycle annealing

Abstract: An investigation of germanium-tin (GeSn) on silicon p-i-n photodetectors with a high-quality Ge0.94Sn0.06 absorbing layer is reported. The GeSn photodetector reached a responsivity as high as 0.45 A/W at the wavelength of 1550 nm and 0.12 A/W at the wavelength of 2 μm. A cycle annealing technology was applied to improve the quality of the epitaxial layer during the growth process by molecular beam epitaxy. A low dark-current density under 1 V reverse bias about 0.078 A/cm2 was achieved at room temperature. Furthermore, the GeSn photodetector could detect a wide spectrum region and the cutoff wavelength reached to about 2.3 μm. This work has great importance in silicon-based short-wave infrared detection.

Key words: GeSn alloy, molecular beam epitaxy, photodetector, cycle annealing

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 61.66.Dk (Alloys ) 68.55.ag (Semiconductors)