中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28101-028101.doi: 10.1088/1674-1056/28/2/028101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明)   

  1. 1 School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
    2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2018-11-06 修回日期:2018-12-07 出版日期:2019-02-05 发布日期:2019-02-05
  • 通讯作者: Hongliang Lv, Haiqiao Ni E-mail:hllv@mail.xidian.edu.cn;nihq@semi.ac.cn
  • 基金资助:
    Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program of China (Grant No. 2018YFA03xxx01), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ2017xxx2), and the National Natural Science Foundation of China (Grant No. 6150xxx6).

Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

Jing Zhang(张静)1,2, Hongliang Lv(吕红亮)1, Haiqiao Ni(倪海桥)2, Shizheng Yang(杨施政)1, Xiaoran Cui(崔晓然)1,2, Zhichuan Niu(牛智川)2, Yimen Zhang(张义门)1, Yuming Zhang(张玉明)1   

  1. 1 School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
    2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2018-11-06 Revised:2018-12-07 Online:2019-02-05 Published:2019-02-05
  • Contact: Hongliang Lv, Haiqiao Ni E-mail:hllv@mail.xidian.edu.cn;nihq@semi.ac.cn
  • Supported by:
    Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program of China (Grant No. 2018YFA03xxx01), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ2017xxx2), and the National Natural Science Foundation of China (Grant No. 6150xxx6).

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摘要： The growth of the InAs film directly on the Si substrate deflected from the plane (100) at 4° towards (110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is 4640 cm2/V·in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320℃ followed by ramping up to 560℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520℃. The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm2/V·at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420℃.

关键词: InAs, Si, high electron mobility, growth temperature, InGaAlAs metamorphic buffer

Abstract: The growth of the InAs film directly on the Si substrate deflected from the plane (100) at 4° towards (110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is 4640 cm2/V·in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320℃ followed by ramping up to 560℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520℃. The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm2/V·at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420℃.

Key words: InAs, Si, high electron mobility, growth temperature, InGaAlAs metamorphic buffer

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.70.-q (Methods of materials testing and analysis)