Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy
张静, 吕红亮, 倪海桥, 杨施政, 崔晓然, 牛智川, 张义门, 张玉明
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明)
中国物理B
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2019, (2): 28101
-028101
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DOI: 10.1088/1674-1056/28/2/028101