Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

doi:10.1088/1674-1056/27/7/078501

中国物理B ›› 2018, Vol. 27 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/27/7/078501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

Yin-Yong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yuan-Ming Wang(王圆明)

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2018-04-02 修回日期:2018-05-02 出版日期:2018-07-05 发布日期:2018-07-05
通讯作者: Yin-Yong Luo E-mail:luoyinhong@nint.ac.cn
基金资助:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043).

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

Yin-Yong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yuan-Ming Wang(王圆明)

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2018-04-02 Revised:2018-05-02 Online:2018-07-05 Published:2018-07-05
Contact: Yin-Yong Luo E-mail:luoyinhong@nint.ac.cn
Supported by:
Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043).

摘要/Abstract

摘要：

In order to accurately predict the single event upsets (SEU) rate of on-orbit proton, the influence of the proton energy distribution, incident angle, supply voltage, and test pattern on the height, width, and position of SEU peak of low energy protons (LEP) in 65 nm static random access memory (SRAM) are quantitatively evaluated and analyzed based on LEP testing data and Monte Carlo simulation. The results show that different initial proton energies used to degrade the beam energy will bring about the difference in the energy distribution of average proton energy at the surface and sensitive region of the device under test (DUT), which further leads to significant differences including the height of SEU peak and the threshold energy of SEU. Using the lowest initial proton energy is extremely important for SEU testing with low energy protons. The proton energy corresponding to the SEU peak shifts to higher average proton energies with the increase of the tilt angle, and the SEU peaks also increase significantly. The reduction of supply voltage lowers the critical charge of SEU, leading to the increase of LEP SEU cross section. For standard 6-transitor SRAM with bit-interleaving technology, SEU peak does not show clear dependence on three test patterns of logical checkerboard 55H, all “1”, and all “0”. It should be noted that all the SEUs in 65 nm SRAM are single cell upset in LEP testing due to proton's low linear energy transfer (LET) value.

关键词: low energy proton, energy distribution, tilt angle, supply voltage, test pattern

Abstract:

Key words: low energy proton, energy distribution, tilt angle, supply voltage, test pattern

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

61.82.Fk (Semiconductors) 21.60.Ka (Monte Carlo models)

罗尹虹, 张凤祁, 潘霄宇, 郭红霞, 王圆明. Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM[J]. 中国物理B, 2018, 27(7): 78501-078501.

Yin-Yong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yuan-Ming Wang(王圆明). Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM[J]. Chin. Phys. B, 2018, 27(7): 78501-078501.

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Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

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