Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

doi:10.1088/1674-1056/26/2/028501

中国物理B ›› 2017, Vol. 26 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/26/2/028501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2016-06-30 修回日期:2016-11-07 出版日期:2017-02-05 发布日期:2017-02-05
通讯作者: Yu-Hang Zhang E-mail:yhzhang0916@foxmail.com
基金资助:
Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2016-06-30 Revised:2016-11-07 Online:2017-02-05 Published:2017-02-05
Contact: Yu-Hang Zhang E-mail:yhzhang0916@foxmail.com
Supported by:
Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).

摘要/Abstract

摘要： The latch-up effect induced by high-power microwave (HPM) in complementary metal-oxide-semiconductor (CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency (PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPM-induced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

关键词: high-power microwave, latch-up, repetitive pulse frequency, supply voltage dependence

Abstract: The latch-up effect induced by high-power microwave (HPM) in complementary metal-oxide-semiconductor (CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency (PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPM-induced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

Key words: high-power microwave, latch-up, repetitive pulse frequency, supply voltage dependence

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

张宇航, 柴常春, 于新海, 杨银堂, 刘阳, 樊庆扬, 史春蕾. Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter[J]. 中国物理B, 2017, 26(2): 28501-028501.

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾). Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter[J]. Chin. Phys. B, 2017, 26(2): 28501-028501.

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Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

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