[1] |
Xin-Yu Xie(谢新宇), Jian Li(李健), Xiao-Lang Qiu(邱小浪), Yong-Li Wang(王永丽), Chuan-Chuan Li(李川川), Xin Wei(韦欣). Mode characteristics of VCSELs with different shape and size oxidation apertures[J]. 中国物理B, 2023, 32(4): 44206-044206. |
[2] |
Dangqi Fang(方党旗). First-principles study of the bandgap renormalization and optical property of β-LiGaO2[J]. 中国物理B, 2023, 32(4): 47101-047101. |
[3] |
Liping Zhang(张丽萍), Zuyu Xu(徐祖雨), Xiaojie Li(黎晓杰), Xu Zhang(张旭), Mingyang Qin(秦明阳), Ruozhou Zhang(张若舟), Juan Xu(徐娟), Wenxin Cheng(程文欣), Jie Yuan(袁洁), Huabing Wang(王华兵), Alejandro V. Silhanek, Beiyi Zhu(朱北沂), Jun Miao(苗君), and Kui Jin(金魁). Cascade excitation of vortex motion and reentrant superconductivity in flexible Nb thin films[J]. 中国物理B, 2023, 32(4): 47302-047302. |
[4] |
Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛). Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6[J]. 中国物理B, 2023, 32(3): 37802-037802. |
[5] |
Li-Man Xiao(肖丽蔓), Huan-Cheng Yang(杨焕成), and Zhong-Yi Lu(卢仲毅). Li2NiSe2: A new-type intrinsic two-dimensional ferromagnetic semiconductor above 200 K[J]. 中国物理B, 2023, 32(3): 37501-037501. |
[6] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
[7] |
Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星). A field-effect WSe2/Si heterojunction diode[J]. 中国物理B, 2023, 32(1): 18505-018505. |
[8] |
Ke Yang(杨珂), Yue-De Yang(杨跃德), Jin-Long Xiao(肖金龙), and Yong-Zhen Huang(黄永箴). Single-mode lasing in a coupled twin circular-side-octagon microcavity[J]. 中国物理B, 2022, 31(9): 94205-094205. |
[9] |
Qi-Qi Wang(王琦琦), Li Xu(徐莉)†, Jie Fan(范杰)‡, Hai-Zhu Wang(王海珠), and Xiao-Hui Ma(马晓辉). Lateral characteristics improvements of DBR laser diode with tapered Bragg grating[J]. 中国物理B, 2022, 31(9): 94204-094204. |
[10] |
Dong-Zhou Zhong(钟东洲), Zhe Xu(徐喆), Ya-Lan Hu(胡亚兰), Ke-Ke Zhao(赵可可), Jin-Bo Zhang(张金波),Peng Hou(侯鹏), Wan-An Deng(邓万安), and Jiang-Tao Xi(习江涛). Multi-target ranging using an optical reservoir computing approach in the laterally coupled semiconductor lasers with self-feedback[J]. 中国物理B, 2022, 31(7): 74205-074205. |
[11] |
Peng Jia(贾鹏), Zhi-Jun Zhang(张志军), Yong-Yi Chen(陈泳屹), Zai-Jin Li(李再金), Li Qin(秦莉), Lei Liang(梁磊), Yu-Xin Lei(雷宇鑫), Cheng Qiu(邱橙), Yue Song(宋悦), Xiao-Nan Shan(单肖楠), Yong-Qiang Ning(宁永强), Yi Qu(曲轶), and Li-Jun Wang(王立军). High power semiconductor laser array with single-mode emission[J]. 中国物理B, 2022, 31(5): 54209-054209. |
[12] |
Jie Wang(王杰), Guang-Zhe Ma(马广哲), Lu Cao(曹露), Min Gao(高敏), and Dong Shi(石东). Doublet luminescence due to coexistence of excitons and electron-hole plasmas in optically excited CH3NH3PbBr3 single crystal[J]. 中国物理B, 2022, 31(4): 47104-047104. |
[13] |
Qi Zhang(张奇), Hengda Sun(孙恒达), and Meifang Zhu(朱美芳). Structure design for high performance n-type polymer thermoelectric materials[J]. 中国物理B, 2022, 31(2): 28506-028506. |
[14] |
Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701. |
[15] |
Xingyuan Guo(郭星原), Zhe Wang(王哲), Shengyan Yin(尹升燕), and Weiping Qin(秦伟平). Near-infrared photocatalysis based on upconversion nanomaterials[J]. 中国物理B, 2022, 31(10): 108201-108201. |