The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

doi:10.1088/1674-1056/26/11/117101

中国物理B ›› 2017, Vol. 26 ›› Issue (11): 117101-117101.doi: 10.1088/1674-1056/26/11/117101

所属专题： TOPICAL REVIEW — ZnO-related materials and devices

• TOPICAL REVIEW—ZnO-related materials and devices • 上一篇下一篇

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Bing-Sheng Li(李炳生), Zhi-Yan Xiao(肖芝燕), Jian-Gang Ma(马剑刚), Yi-Chun Liu(刘益春)

1. Department of physics, School of Sciences, Harbin Institute of Technology, Harbin 150080, China;
2. Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, China

收稿日期:2017-05-04 修回日期:2017-06-15 出版日期:2017-11-05 发布日期:2017-11-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11474076).

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

Bing-Sheng Li(李炳生)¹, Zhi-Yan Xiao(肖芝燕)², Jian-Gang Ma(马剑刚)², Yi-Chun Liu(刘益春)²

1. Department of physics, School of Sciences, Harbin Institute of Technology, Harbin 150080, China;
2. Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, China

Received:2017-05-04 Revised:2017-06-15 Online:2017-11-05 Published:2017-11-05
Contact: Yi-Chun Liu E-mail:ycliu@nenu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11474076).

摘要/Abstract

摘要：

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper, we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

关键词: wide band gap semiconductor, p-ZnO, Zn₃N₂, thermal oxidation

Abstract:

Key words: wide band gap semiconductor, p-ZnO, Zn₃N₂, thermal oxidation

中图分类号: (Other nonmetals)

71.55.Ht

72.80.Jc (Other crystalline inorganic semiconductors) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

李炳生, 肖芝燕, 马剑刚, 刘益春. The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors[J]. 中国物理B, 2017, 26(11): 117101-117101.

Bing-Sheng Li(李炳生), Zhi-Yan Xiao(肖芝燕), Jian-Gang Ma(马剑刚), Yi-Chun Liu(刘益春). The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors[J]. Chin. Phys. B, 2017, 26(11): 117101-117101.

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The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors

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