中国物理B ›› 2017, Vol. 26 ›› Issue (8): 86201-086201.doi: 10.1088/1674-1056/26/8/086201

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)   

  1. National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2017-02-27 修回日期:2017-04-30 出版日期:2017-08-05 发布日期:2017-08-05
  • 通讯作者: Fa-Jun Li E-mail:lifajun1201@gmail.com

Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶)   

  1. National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China
  • Received:2017-02-27 Revised:2017-04-30 Online:2017-08-05 Published:2017-08-05
  • Contact: Fa-Jun Li E-mail:lifajun1201@gmail.com
  • About author:0.1088/1674-1056/26/8/

摘要:

To gain a physical insight into the radiation effect on nanowires (NWs), the time resolved photoluminescence (TRPL) technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core-shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0×1012 cm-2 to 3.0×1013 cm-2. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley-Read-Hall (SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.

关键词: radiation effect, minority carrier lifetime, defect concentration, radiation damage

Abstract:

To gain a physical insight into the radiation effect on nanowires (NWs), the time resolved photoluminescence (TRPL) technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core-shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0×1012 cm-2 to 3.0×1013 cm-2. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley-Read-Hall (SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.

Key words: radiation effect, minority carrier lifetime, defect concentration, radiation damage

中图分类号:  (Nanowires)

  • 62.23.Hj
61.72.-y (Defects and impurities in crystals; microstructure) 61.80.-x (Physical radiation effects, radiation damage) 61.80.Jh (Ion radiation effects)