Graphene/Mo2C heterostructure directly grown by chemical vapor deposition

doi:10.1088/1674-1056/26/6/067901

中国物理B ›› 2017, Vol. 26 ›› Issue (6): 67901-067901.doi: 10.1088/1674-1056/26/6/067901

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Graphene/Mo₂C heterostructure directly grown by chemical vapor deposition

1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2017-01-10 修回日期:2017-02-28 出版日期:2017-06-05 发布日期:2017-06-05
通讯作者: Guanghui Yu, Da Jiang E-mail:ghyu@mail.sim.ac.cn;jiangda@mail.sim.ac.cn

Graphene/Mo₂C heterostructure directly grown by chemical vapor deposition

Rongxuan Deng(邓荣轩)^1,2, Haoran Zhang(张浩然)^1,2, Yanhui Zhang(张燕辉)¹, Zhiying Chen(陈志蓥)¹, Yanping Sui(隋妍萍)¹, Xiaoming Ge(葛晓明)^1,2, Yijian Liang(梁逸俭)^1,2, Shike Hu(胡诗珂)^1,2, Guanghui Yu(于广辉)¹, Da Jiang(姜达)¹

1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2017-01-10 Revised:2017-02-28 Online:2017-06-05 Published:2017-06-05
Contact: Guanghui Yu, Da Jiang E-mail:ghyu@mail.sim.ac.cn;jiangda@mail.sim.ac.cn

摘要/Abstract

摘要： Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo₂C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo₂C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.

关键词: graphene/Mo₂C heterostructure, CVD, methane flow rate, superconductivity

Abstract: Graphene-based heterostructure is one of the most attractive topics in physics and material sciences due to its intriguing properties and applications. We report the one-step fabrication of a novel graphene/Mo₂C heterostructure by using chemical vapor deposition (CVD). The composition and structure of the heterostructure are characterized through energy-dispersive spectrometer, transmission electron microscope, and Raman spectrum. The growth rule analysis of the results shows the flow rate of methane is a main factor in preparing the graphene/Mo₂C heterostructure. A schematic diagram of the growth process is also established. Transport measurements are performed to study the superconductivity of the heterostructure which has potential applications in superconducting devices.

Key words: graphene/Mo₂C heterostructure, CVD, methane flow rate, superconductivity

中图分类号: (Interfaces; heterostructures; nanostructures)

79.60.Jv

81.05.ue (Graphene) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 74.70.-b (Superconducting materials other than cuprates)

邓荣轩, 张浩然, 张燕辉, 陈志蓥, 隋妍萍, 葛晓明, 梁逸俭, 胡诗珂, 于广辉, 姜达. Graphene/Mo₂C heterostructure directly grown by chemical vapor deposition[J]. 中国物理B, 2017, 26(6): 67901-067901.

Rongxuan Deng(邓荣轩), Haoran Zhang(张浩然), Yanhui Zhang(张燕辉), Zhiying Chen(陈志蓥), Yanping Sui(隋妍萍), Xiaoming Ge(葛晓明), Yijian Liang(梁逸俭), Shike Hu(胡诗珂), Guanghui Yu(于广辉), Da Jiang(姜达). Graphene/Mo₂C heterostructure directly grown by chemical vapor deposition[J]. Chin. Phys. B, 2017, 26(6): 67901-067901.

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Graphene/Mo₂C heterostructure directly grown by chemical vapor deposition

Graphene/Mo₂C heterostructure directly grown by chemical vapor deposition

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