中国物理B ›› 2017, Vol. 26 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/26/6/068101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE

Jie Chen(陈杰), Pu-Man Huang(黄溥曼), Xiao-Biao Han(韩小标), Zheng-Zhou Pan(潘郑州), Chang-Ming Zhong(钟昌明), Jie-Zhi Liang(梁捷智), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), Bai-Jun Zhang(张佰君)   

  1. 1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China;
    2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
    3 Institute of Power Electronics and Control Technology, Sun Yat-sen University, Guangzhou 510275, China
  • 收稿日期:2016-11-29 修回日期:2017-02-12 出版日期:2017-06-05 发布日期:2017-06-05
  • 通讯作者: Yang Liu, Bai-Jun Zhang E-mail:liuy69@mail.sysu.edu.cn;zhbaij@mail.sysu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 61574173), the National Key Research and Development Program, China (Grant No. 2016YFB0400105), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the International Science and Technology Collaboration Program of Guangzhou City, China (Grant No. 2016201604030055), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), Guangdong Provincial Natural Science Foundation, China (Grant No. 2015A030312011), the Science & Technology Plan of Guangdong Province, China (Grant Nos. 2015B090903062, 2015B010132007, and 2015B010129010), the Science and Technology Plan of Guangzhou, China (Grant No. 201508010048), the Science and Technology Plan of Foshan, China (Grant No. 201603130003), Guangdong-Hong Kong Joint Innovation Project of Guangdong Province, China (Grant No. 2014B050505009), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17), the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-sen University (Grant No. 20167612042080001).

Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE

Jie Chen(陈杰), Pu-Man Huang(黄溥曼)1, Xiao-Biao Han(韩小标)1, Zheng-Zhou Pan(潘郑州)1, Chang-Ming Zhong(钟昌明)1, Jie-Zhi Liang(梁捷智)1, Zhi-Sheng Wu(吴志盛)1,2, Yang Liu(刘扬)1,2,3, Bai-Jun Zhang(张佰君)1,2   

  1. 1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China;
    2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China;
    3 Institute of Power Electronics and Control Technology, Sun Yat-sen University, Guangzhou 510275, China
  • Received:2016-11-29 Revised:2017-02-12 Online:2017-06-05 Published:2017-06-05
  • Contact: Yang Liu, Bai-Jun Zhang E-mail:liuy69@mail.sysu.edu.cn;zhbaij@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 61574173), the National Key Research and Development Program, China (Grant No. 2016YFB0400105), the International Science and Technology Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the International Science and Technology Collaboration Program of Guangzhou City, China (Grant No. 2016201604030055), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), Guangdong Provincial Natural Science Foundation, China (Grant No. 2015A030312011), the Science & Technology Plan of Guangdong Province, China (Grant Nos. 2015B090903062, 2015B010132007, and 2015B010129010), the Science and Technology Plan of Guangzhou, China (Grant No. 201508010048), the Science and Technology Plan of Foshan, China (Grant No. 201603130003), Guangdong-Hong Kong Joint Innovation Project of Guangdong Province, China (Grant No. 2014B050505009), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17), the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-sen University (Grant No. 20167612042080001).

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摘要： GaN micro-pyramids with AlGaN capping layer are grown by selective metal-organic-vapor phase epitaxy (MOVPE). Compared with bare GaN micro-pyramids, AlGaN/GaN micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al-N than that of Ga-N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1101} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.

关键词: metal-organic-vapor phase epitaxy, selective area growth, migration length

Abstract: GaN micro-pyramids with AlGaN capping layer are grown by selective metal-organic-vapor phase epitaxy (MOVPE). Compared with bare GaN micro-pyramids, AlGaN/GaN micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al-N than that of Ga-N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1101} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.

Key words: metal-organic-vapor phase epitaxy, selective area growth, migration length

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.16.Rf (Micro- and nanoscale pattern formation) 47.57.ef (Sedimentation and migration)