中国物理B ›› 2017, Vol. 26 ›› Issue (1): 18505-018505.doi: 10.1088/1674-1056/26/1/018505
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Xi Han(韩玺), Wei Xiang(向伟), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Yao-Yao Sun(孙姚耀), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川)
Xi Han(韩玺)1,2, Wei Xiang(向伟)1,2, Hong-Yue Hao(郝宏玥)1,2, Dong-Wei Jiang(蒋洞微)1,2, Yao-Yao Sun(孙姚耀)1,2, Guo-Wei Wang(王国伟)1,2, Ying-Qiang Xu(徐应强)1,2, Zhi-Chuan Niu(牛智川)1,2
摘要: A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of -20 mV, yielding a peak specific detectivity of 5.89×1010 cm·Hz1/2·W-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
中图分类号: (Photodetectors (including infrared and CCD detectors))