中国物理B ›› 2016, Vol. 25 ›› Issue (12): 124209-124209.doi: 10.1088/1674-1056/25/12/124209

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

Kai-Li Li(李凯丽), Jun-Ming An(安俊明), Jia-Shun Zhang(张家顺), Yue Wang(王玥), Liang-Liang Wang(王亮亮), Jian-Guang Li(李建光), Yuan-Da Wu(吴远大), Xiao-Jie Yin(尹小杰), Xiong-Wei Hu(胡雄伟)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2016-04-22 修回日期:2016-07-30 出版日期:2016-12-05 发布日期:2016-12-05
  • 通讯作者: Jun-Ming An E-mail:junming@semi.ac.cn
  • 基金资助:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016902), the National Natural Science Foundation of China (Grant Nos. 61274047, 61435013, 61307034, and 61405188), and the National Key Research and Development Program of China (Grant No. 2016YFB0402504).

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

Kai-Li Li(李凯丽), Jun-Ming An(安俊明), Jia-Shun Zhang(张家顺), Yue Wang(王玥), Liang-Liang Wang(王亮亮), Jian-Guang Li(李建光), Yuan-Da Wu(吴远大), Xiao-Jie Yin(尹小杰), Xiong-Wei Hu(胡雄伟)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2016-04-22 Revised:2016-07-30 Online:2016-12-05 Published:2016-12-05
  • Contact: Jun-Ming An E-mail:junming@semi.ac.cn
  • Supported by:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016902), the National Natural Science Foundation of China (Grant Nos. 61274047, 61435013, 61307034, and 61405188), and the National Key Research and Development Program of China (Grant No. 2016YFB0402504).

摘要:

The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.

关键词: SOI, nanowire AWG, crosstalk, phase errors

Abstract:

The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.

Key words: SOI, nanowire AWG, crosstalk, phase errors

中图分类号:  (Optical communication systems, multiplexers, and demultiplexers?)

  • 42.79.Sz
42.82.Bq (Design and performance testing of integrated-optical systems) 42.82.Et (Waveguides, couplers, and arrays)