Time-dependent crosstalk effects for image sensors with different isolation structures

doi:10.1088/1674-1056/27/8/088503

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/27/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Time-dependent crosstalk effects for image sensors with different isolation structures

Lei Shen(沈磊), Li-Qiao Liu(刘力桥), Hao Hao(郝好), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦)

Institute of Microelectronics, Peking University, Beijing, China

收稿日期:2018-02-22 修回日期:2018-04-16 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Xiao-Yan Liu E-mail:xyliu@ime.pku.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. NKRDP 2016YFA0202101).

Time-dependent crosstalk effects for image sensors with different isolation structures

Lei Shen(沈磊), Li-Qiao Liu(刘力桥), Hao Hao(郝好), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦)

Institute of Microelectronics, Peking University, Beijing, China

Received:2018-02-22 Revised:2018-04-16 Online:2018-08-05 Published:2018-08-05
Contact: Xiao-Yan Liu E-mail:xyliu@ime.pku.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. NKRDP 2016YFA0202101).

摘要/Abstract

摘要： Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially noticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isolation structures are investigated. According to the different depths of photo-diode (PD) and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.

关键词: image sensor, crosstalk, pixel isolation

Abstract: Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially noticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isolation structures are investigated. According to the different depths of photo-diode (PD) and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.

Key words: image sensor, crosstalk, pixel isolation

中图分类号: (Optoelectronic devices)

85.60.-q

沈磊, 刘力桥, 郝好, 杜刚, 刘晓彦. Time-dependent crosstalk effects for image sensors with different isolation structures[J]. 中国物理B, 2018, 27(8): 88503-088503.

Lei Shen(沈磊), Li-Qiao Liu(刘力桥), Hao Hao(郝好), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦). Time-dependent crosstalk effects for image sensors with different isolation structures[J]. Chin. Phys. B, 2018, 27(8): 88503-088503.

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Time-dependent crosstalk effects for image sensors with different isolation structures

Time-dependent crosstalk effects for image sensors with different isolation structures

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