Binding energy of the donor impurities in GaAs-Ga1-xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields

doi:10.1088/1674-1056/25/10/100302

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 100302-100302.doi: 10.1088/1674-1056/25/10/100302

Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

Esra Aciksoz, Orhan Bayrak, Asim Soylu

1 Department of Physics, Akdeniz University, 07058, Antalya, Turkey;
2 Department of Physics, Nigde University, 51240, Nigde, Turkey

收稿日期:2016-02-01 修回日期:2016-05-04 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Orhan Bayrak E-mail:bayrak@akdeniz.edu.tr
基金资助:
Project supported by the Turkish Science Research Council (TÜBİTAK) and the Financial Supports from Akdeniz and Nigde Universities.

Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

Esra Aciksoz¹, Orhan Bayrak¹, Asim Soylu²

1 Department of Physics, Akdeniz University, 07058, Antalya, Turkey;
2 Department of Physics, Nigde University, 51240, Nigde, Turkey

Received:2016-02-01 Revised:2016-05-04 Online:2016-10-05 Published:2016-10-05
Contact: Orhan Bayrak E-mail:bayrak@akdeniz.edu.tr
Supported by:
Project supported by the Turkish Science Research Council (TÜBİTAK) and the Financial Supports from Akdeniz and Nigde Universities.

摘要/Abstract

摘要： The behavior of a donor in the GaAs-Ga_1-xAl_xAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (D_e, r_e, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.

关键词: Morse potential, electric field, magnetic field, the donor atom, quantum well wire

Abstract: The behavior of a donor in the GaAs-Ga_1-xAl_xAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (D_e, r_e, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.

Key words: Morse potential, electric field, magnetic field, the donor atom, quantum well wire

中图分类号: (Solutions of wave equations: bound states)

03.65.Ge

03.50.De (Classical electromagnetism, Maxwell equations) 41.20.-q (Applied classical electromagnetism)

Esra Aciksoz, Orhan Bayrak, Asim Soylu. Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields[J]. 中国物理B, 2016, 25(10): 100302-100302.

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Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

Binding energy of the donor impurities in GaAs-Ga_1-xAl_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

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