×
模态框（Modal）标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框（Modal）标题
在这里添加一些文本
关闭
A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
张立忠, 王源, 陆光易, 曹健, 张兴
A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
Zhang Li-Zhong (张立忠), Wang Yuan (王源), Lu Guang-Yi (陆光易), Cao Jian (曹健), Zhang Xing (张兴)
中国物理B . 2015, (
10
): 108503 -108503 . DOI: 10.1088/1674-1056/24/10/108503