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Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Ion migration in metal halide perovskite QLEDs and its inhibition[J]. 中国物理B, 2023, 32(1): 18507-018507. |
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Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Large-area fabrication: The next target of perovskite light-emitting diodes[J]. 中国物理B, 2021, 30(8): 88502-088502. |
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Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽). Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome[J]. 中国物理B, 2021, 30(12): 123302-123302. |
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Byung-Ryool Hyun, Mikita Marus, 钟华英, 李德鹏, 刘皓宸, 谢阅, Weon-kyu Koh, 徐冰, 刘言军, 孙小卫. Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals[J]. 中国物理B, 2020, 29(1): 18503-018503. |
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王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. 中国物理B, 2019, 28(8): 87802-087802. |
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王燕丽, 李培咸, 许晟瑞, 周小伟, 张心禹, 姜思宇, 黄茹雪, 刘洋, 訾亚丽, 吴金星, 郝跃. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes[J]. 中国物理B, 2019, 28(3): 38502-038502. |
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吴倩倩, 曹璠, 孔令媚, 杨绪勇. InP quantum dots-based electroluminescent devices[J]. 中国物理B, 2019, 28(11): 118103-118103. |
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李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803. |
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王林媛, 宋伟东, 胡文晓, 李光, 罗幸君, 汪虎, 肖稼凯, 郭佳琦, 王幸福, 郝锐, 易翰翔, 吴启保, 李述体. Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer[J]. 中国物理B, 2019, 28(1): 18503-018503. |
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郭霞, 刘巧莉, 田慧军, 郭春威, 李冲, 胡安琪, 何晓颖, 武华. Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires[J]. 中国物理B, 2018, 27(9): 98502-098502. |
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Abida Perveen, 张欣, 汤加仑, 韩登宝, 常帅, 邓罗根, 纪文宇, 钟海政. Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes[J]. 中国物理B, 2018, 27(8): 86101-086101. |
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梁亚川, 刘凯凯, 卢英杰, 赵琪, 单崇新. Silica encapsulated ZnO quantum dot-phosphor nanocomposites: Sol-gel preparation and white light-emitting device application[J]. 中国物理B, 2018, 27(7): 78102-078102. |
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杨景景, 方庆清, 杜文汉, 董大舜. High mobility ultrathin ZnO p-n homojunction modulated by Zn0.85Mg0.15O quantum barriers[J]. 中国物理B, 2018, 27(3): 37804-037804. |
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谭竣天, 张淑芳, 钱明灿, 罗海军, 吴芳, 龙兴明, 方亮, 魏大鹏, 胡宝山. Effect of graphene/ZnO hybrid transparent electrode on characteristics of GaN light-emitting diodes[J]. 中国物理B, 2018, 27(11): 114401-114401. |
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李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 马紫光, 吴海燕, 王禄, 贾海强, 王文新, 陈弘. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure[J]. 中国物理B, 2017, 26(8): 87311-087311. |