Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

doi:10.1088/1674-1056/24/9/096802

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 96802-096802.doi: 10.1088/1674-1056/24/9/096802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

何晓光^a, 赵德刚^a, 江德生^a, 朱建军^a, 陈平^a, 刘宗顺^a, 乐伶聪^a, 杨静^a, 李晓静^a, 张书明^b, 杨辉^b

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China

收稿日期:2014-12-05 修回日期:2015-03-31 出版日期:2015-09-05 发布日期:2015-09-05
基金资助:
Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

He Xiao-Guang (何晓光)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Zhu Jian-Jun (朱建军)^a, Chen Ping (陈平)^a, Liu Zong-Shun (刘宗顺)^a, Le Ling-Cong (乐伶聪)^a, Yang Jing (杨静)^a, Li Xiao-Jing (李晓静)^a, Zhang Shu-Ming (张书明)^b, Yang Hui (杨辉)^b

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China

Received:2014-12-05 Revised:2015-03-31 Online:2015-09-05 Published:2015-09-05
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project support by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

摘要/Abstract

摘要：

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19× 10¹³ cm^-2, electron mobility of 2101 cm²·V^-1·s^-1, and square resistance of 249 Ω is obtained.

关键词: high electron mobility transistor, two-dimensional electron gas, GaN

Abstract:

Key words: high electron mobility transistor, two-dimensional electron gas, GaN

中图分类号: (Semiconductors)

68.35.bg

68.35.Ct (Interface structure and roughness) 72.10.-d (Theory of electronic transport; scattering mechanisms)

何晓光, 赵德刚, 江德生, 朱建军, 陈平, 刘宗顺, 乐伶聪, 杨静, 李晓静, 张书明, 杨辉. Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure[J]. 中国物理B, 2015, 24(9): 96802-096802.

He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), Li Xiao-Jing (李晓静), Zhang Shu-Ming (张书明), Yang Hui (杨辉). Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure[J]. Chin. Phys. B, 2015, 24(9): 96802-096802.

参考文献 10

[1]	Zhao S L, Mi M H, Hou B, Luo J, Wang Y, Dai Y, Zhang J C, Ma X H and Hao Y 2014 Chin. Phys. B 23 107303
[2]	Shen L, Heikman S, Moran B, Coffie R, Zhang N Q, Buttari D, Smorchkova I P, Keller S, DenBaars S P and Mishra U K 2001 IEEE Electron Device Lett. 22 457
[3]	Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S and Mishra U K 2001 J. Appl. Phys. 90 5196
[4]	Miyoshi M, Egawa T and Ishikawa H 2005 J. Vac. Sci. Technol. B 23 1527
[5]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[6]	Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S and Mishra U K 1999 J. Appl. Phys. 86 4520
[7]	Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
[8]	He X, Zhao D, Jiang D, Zhu J, Chen P, Liu Z, Le L, Yang J, Li X, Zhang S and Yang H 2014 J. Vac. Sci. Technol. B 32 051207
[9]	Koleske D D, Fischer A J, Allerman A A, Mitchell C C, Cross K C, Kurtz S R, Figiel J J, Fullmer K W and Breiland W G 2002 Appl. Phys. Lett. 81 1940
[10]	Chen J, Zhang S M, Zhang B S, Zhu J J, Feng G, Shen X M, Wang Y T, Yang H and Zheng W C 2003 J. Cryst. Growth 254 348

[1]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[2]	Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201.
[3]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[4]	Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302.
[5]	Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701.
[6]	Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306.
[7]	Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J]. 中国物理B, 2023, 32(1): 18103-018103.
[8]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.
[9]	Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Liquid-phase synthesis of Li₂S and Li₃PS₄ with lithium-based organic solutions[J]. 中国物理B, 2022, 31(9): 98203-098203.
[10]	Jing-Yu Zhao(赵靖宇) and Zheng-Yu Weng(翁征宇). Mottness, phase string, and high-T_c superconductivity[J]. 中国物理B, 2022, 31(8): 87104-087104.
[11]	Pei-Feng Lin(林培锋), Xiao Hu(胡箫), and Jian-Zhong Lin(林建忠). Inertial focusing and rotating characteristics of elliptical and rectangular particle pairs in channel flow[J]. 中国物理B, 2022, 31(8): 80501-080501.
[12]	Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206.
[13]	Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙). Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes[J]. 中国物理B, 2022, 31(7): 77801-077801.
[14]	Ying-Zhe Wang(王颖哲), Mao-Sen Wang(王茂森), Ning Hua(化宁), Kai Chen(陈凯), Zhi-Min He(何志敏), Xue-Feng Zheng(郑雪峰), Pei-Xian Li(李培咸), Xiao-Hua Ma(马晓华), Li-Xin Guo(郭立新), and Yue Hao(郝跃). Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes[J]. 中国物理B, 2022, 31(6): 68101-068101.
[15]	Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate[J]. 中国物理B, 2022, 31(6): 68501-068501.

Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 10

相关文章 15

Metrics

本文评价

推荐阅读 0