Effect of body biasing on single-event induced charge collection in deep N-well technology

doi:10.1088/1674-1056/24/7/079401

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 79401-079401.doi: 10.1088/1674-1056/24/7/079401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇下一篇

Effect of body biasing on single-event induced charge collection in deep N-well technology

丁一^a, 胡建国^a, 秦军瑞^b, 谭洪舟^a

a School of Information Science and Technology, Sun Yat-Sen University, Guangzhou 510275, China;
b Chinese Electronic Equipment System Engineering Company, Beijing 100141, China

收稿日期:2014-12-18 修回日期:2015-02-09 出版日期:2015-07-05 发布日期:2015-07-05

Effect of body biasing on single-event induced charge collection in deep N-well technology

Ding Yi (丁一)^a, Hu Jian-Guo (胡建国)^a, Qin Jun-Rui (秦军瑞)^b, Tan Hong-Zhou (谭洪舟)^a

a School of Information Science and Technology, Sun Yat-Sen University, Guangzhou 510275, China;
b Chinese Electronic Equipment System Engineering Company, Beijing 100141, China

Received:2014-12-18 Revised:2015-02-09 Online:2015-07-05 Published:2015-07-05
Contact: Hu Jian-Guo E-mail:hujguo@mail.sysu.edu.cn

摘要/Abstract

摘要： As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well.

关键词: body biasing, electron, hole, bipolar amplification

Abstract: As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well.

Key words: body biasing, electron, hole, bipolar amplification

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

丁一, 胡建国, 秦军瑞, 谭洪舟. Effect of body biasing on single-event induced charge collection in deep N-well technology[J]. 中国物理B, 2015, 24(7): 79401-079401.

Ding Yi (丁一), Hu Jian-Guo (胡建国), Qin Jun-Rui (秦军瑞), Tan Hong-Zhou (谭洪舟). Effect of body biasing on single-event induced charge collection in deep N-well technology[J]. Chin. Phys. B, 2015, 24(7): 79401-079401.

参考文献 18

[1]	Tang D, He C H, Li Y H, Zhang H, Xiong C and Zhang J X 2014 Sci. China Tech. Sci. 57 1846
[2]	Zhang K Y, Guo H X, Luo Y H, Fan R Y, Chen W, Lin D S, Guo G and Yan Y H 2011 Chin. Phys. B 20 068501
[3]	Amusan O A, Witulski A L, Massengill L W, Bhuva B L, Fleming P R, Alles M L, Sternberg A L, Black J D and Schrimpf R D 2006 IEEE Trans. Nucl. Sci. 53 3253
[4]	Ahlbin J R, Gadlage M J, Atkinson N M, Narasimham B, Bhuva B L, Withulski F, Holman W T, Eaton P H and Massengill L W 2011 IEEE Trans. Device Mater. Rel. 11 401
[5]	Sheshadri V B, Bhuva B L, Reed R A, Weller R A, Mendenhall M H and Schrimpf R D 2010 Proc. IRPS, USA, pp. 194-198
[6]	Ahlbin J R, Massengill L W, Bhuva B L, Narasimham B, Gadlage M J and Eaton P H 2009 IEEE Trans. Nucl. Sci. 56 3050
[7]	Harada R, Mitsuyama Y, Hashimoto and Onoye T 2011 Proc. IRPS, USA, pp. 253-257
[8]	Narendra S, Keshavarzi A, Bloechel B A, Borkar S and De V 2003 IEEE J. Solid-State Circuits 38 696
[9]	Chen T and Naffziger S 2003 IEEE Trans. Very Large Scale Integr. Syst. 11 888
[10]	Qin J, Chen S, Guo C and Du Y 2014 IEEE Trans. Nucl. Sci. 14 639
[11]	Zhang K, Manzawa Y and Kobayashi K 2014 Proc. IRPS, USA, pp. SE.2.1-SE.2.4
[12]	Qin J R, Chen S M, Liang B and Liu B W 2012 Chin. Phys. B 21 029401
[13]	Qin J R, Chen S M, Liu B W, Liu Z, Liang B and Du Y K 2011 Chin. Phys. B 20 129401
[14]	He Y B and Chen S M 2014 Chin. Phys. B 23 079401
[15]	Liu B W, Chen J J, Chen S M and Chi Y Q 2012 Acta Phys. Sin. 61 096102 (in Chinese)
[16]	Du Y, Chen S and Chen J 2014 IEEE Trans. Device Mater. Rel. 14 213
[17]	Du Y, Chen S and Liu B 2014 IEEE Trans. Device Mater. Rel. 14 268
[18]	Li D W, Qin J R and Chen S M 2013 Chin. Phys. B 22 29401

Effect of body biasing on single-event induced charge collection in deep N-well technology

Effect of body biasing on single-event induced charge collection in deep N-well technology

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