中国物理B ›› 2015, Vol. 24 ›› Issue (6): 68106-068106.doi: 10.1088/1674-1056/24/6/068106

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇    下一篇

GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges

吴洁君, 王昆, 于彤军, 张国义   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2015-04-21 修回日期:2015-05-13 发布日期:2015-06-25
  • 基金资助:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032605), the National Key Basic Research and Development Program of China (Grant Nos. 2012CB619304 and 2011CB301904), and the National Natural Science Foundation of China (Grant Nos. 61376012, 61474003, and 61327801).

GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges

Wu Jie-Jun (吴洁君), Wang Kun (王昆), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义)   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2015-04-21 Revised:2015-05-13 Published:2015-06-25
  • Contact: Yu Tong-Jun E-mail:tongjun@pku.edu.cn
  • About author:81.05.Ea; 81.10.-h; 81.15.Kk
  • Supported by:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2014AA032605), the National Key Basic Research and Development Program of China (Grant Nos. 2012CB619304 and 2011CB301904), and the National Natural Science Foundation of China (Grant Nos. 61376012, 61474003, and 61327801).

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摘要：

After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.

关键词: gallium nitride (GaN), free standing substrate, hydride vapor phase epitaxy (HVPE), homo-epitaxy

Abstract:

After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.

Key words: gallium nitride (GaN), free standing substrate, hydride vapor phase epitaxy (HVPE), homo-epitaxy

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)