Subthreshold behavior of AlInSb/InSb high electron mobility transistors

doi:10.1088/1674-1056/24/7/076105

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 76105-076105.doi: 10.1088/1674-1056/24/7/076105

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Subthreshold behavior of AlInSb/InSb high electron mobility transistors

S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan

Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai, Tamil Nadu, India

收稿日期:2014-10-16 修回日期:2015-02-13 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the Council of Scientific & Industrial Research (CSIR), Government of India under the SRF Scheme (Sanction Letter No: 08/237(0005)/2012-EMR-I).

Subthreshold behavior of AlInSb/InSb high electron mobility transistors

S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan

Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai, Tamil Nadu, India

Received:2014-10-16 Revised:2015-02-13 Online:2015-07-05 Published:2015-07-05
Contact: S. Theodore Chandra E-mail:theodore@tce.edu
Supported by:
Project supported by the Council of Scientific & Industrial Research (CSIR), Government of India under the SRF Scheme (Sanction Letter No: 08/237(0005)/2012-EMR-I).

摘要/Abstract

摘要： We propose a scaling theory for single gate AlInSb/InSb high electron mobility transistors (HEMTs) by solving the two-dimensional (2D) Poisson equation. In our model, the effective conductive path effect (ECPE) is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Ø_deff,min and the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.

关键词: scaling theory, subthreshold behavior, effective conducting path effect, short channel effect

Abstract: We propose a scaling theory for single gate AlInSb/InSb high electron mobility transistors (HEMTs) by solving the two-dimensional (2D) Poisson equation. In our model, the effective conductive path effect (ECPE) is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Ø_deff,min and the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.

Key words: scaling theory, subthreshold behavior, effective conducting path effect, short channel effect

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

68.65.Fg (Quantum wells) 73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)

S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan. Subthreshold behavior of AlInSb/InSb high electron mobility transistors[J]. 中国物理B, 2015, 24(7): 76105-076105.

S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan. Subthreshold behavior of AlInSb/InSb high electron mobility transistors[J]. Chin. Phys. B, 2015, 24(7): 76105-076105.

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Subthreshold behavior of AlInSb/InSb high electron mobility transistors

Subthreshold behavior of AlInSb/InSb high electron mobility transistors

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