Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

doi:10.1088/1674-1056/24/4/046103

›› 2015, Vol. 24 ›› Issue (4): 46103-046103.doi: 10.1088/1674-1056/24/4/046103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

陈睿^{a b}, 韩建伟^a, 郑汉生^{a b}, 余永涛^{a b}, 上官士鹏^a, 封国强^a, 马英起^a

a National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2014-08-19 修回日期:2014-10-10 出版日期:2015-04-05 发布日期:2015-04-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 41304148).

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

Chen Rui (陈睿)^{a b}, Han Jian-Wei (韩建伟)^a, Zheng Han-Sheng (郑汉生)^{a b}, Yu Yong-Tao (余永涛)^{a b}, Shangguan Shi-Peng (上官士鹏)^a, Feng Guo-Qiang (封国强)^a, Ma Ying-Qi (马英起)^a

a National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2014-08-19 Revised:2014-10-10 Online:2015-04-05 Published:2015-04-05
Contact: Chen Rui E-mail:chenrui632@sina.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 41304148).

摘要/Abstract

摘要： By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the “high current”, relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal-oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between “high current” induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the “high current” induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU.

关键词: single event latch-up, transient-induced latch-up, electro-static discharge, pulsed laser

Abstract: By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the “high current”, relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal-oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between “high current” induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the “high current” induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU.

Key words: single event latch-up, transient-induced latch-up, electro-static discharge, pulsed laser

中图分类号: (Ion radiation effects)

61.80.Jh

85.30.De (Semiconductor-device characterization, design, and modeling) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

陈睿, 韩建伟, 郑汉生, 余永涛, 上官士鹏, 封国强, 马英起. Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up[J]. , 2015, 24(4): 46103-046103.

Chen Rui (陈睿), Han Jian-Wei (韩建伟), Zheng Han-Sheng (郑汉生), Yu Yong-Tao (余永涛), Shangguan Shi-Peng (上官士鹏), Feng Guo-Qiang (封国强), Ma Ying-Qi (马英起). Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up[J]. Chin. Phys. B, 2015, 24(4): 46103-046103.

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Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

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