中国物理B ›› 2015, Vol. 24 ›› Issue (1): 17305-017305.doi: 10.1088/1674-1056/24/1/017305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps

方忠慧, 江小帆, 陈坤基, 王越飞, 李伟, 徐骏   

  1. State Key Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2014-07-11 修回日期:2014-10-17 出版日期:2015-01-05 发布日期:2015-01-05
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant No. 11374153).

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps

Fang Zhong-Hui (方忠慧), Jiang Xiao-Fan (江小帆), Chen Kun-Ji (陈坤基), Wang Yue-Fei (王越飞), Li Wei (李伟), Xu Jun (徐骏)   

  1. State Key Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China
  • Received:2014-07-11 Revised:2014-10-17 Online:2015-01-05 Published:2015-01-05
  • Contact: Chen Kun-Ji E-mail:kjchen@nju.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant No. 11374153).

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摘要：

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals (Si-NCs) embedded in SiNx floating gate MOS structures. The capacitance-voltage (C-V), current-voltage (I-V), and admittance-voltage (G-V) measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift (ΔVFB) due to full charged holes (～ 6.2 V) is much larger than that due to full charged electrons (～ 1 V). The charging displacement current peaks of electrons and holes can be also observed by the I-V measurements, respectively. From the G-V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the SiO2/Si-substrate interface. Combining the results of C-V and G-V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G-V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.

关键词: silicon nanocrystals memory, different charging of electrons and holes, oxide traps, admittance-voltage characteristics

Abstract:

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals (Si-NCs) embedded in SiNx floating gate MOS structures. The capacitance-voltage (C-V), current-voltage (I-V), and admittance-voltage (G-V) measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift (ΔVFB) due to full charged holes (～ 6.2 V) is much larger than that due to full charged electrons (～ 1 V). The charging displacement current peaks of electrons and holes can be also observed by the I-V measurements, respectively. From the G-V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the SiO2/Si-substrate interface. Combining the results of C-V and G-V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G-V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.

Key words: silicon nanocrystals memory, different charging of electrons and holes, oxide traps, admittance-voltage characteristics

中图分类号:  (Nanocrystalline materials)

  • 73.63.Bd
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)