Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

doi:10.1088/1674-1056/23/10/106102

›› 2014, Vol. 23 ›› Issue (10): 106102-106102.doi: 10.1088/1674-1056/23/10/106102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

郑齐文^{a b c}, 余学峰^{a b}, 崔江维^{a b}, 郭旗^{a b}, 任迪远^{a b}, 丛忠超^{a b c}, 周航^{a b c}

a Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
c University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2014-02-12 修回日期:2014-04-07 出版日期:2014-10-15 发布日期:2014-10-15

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Zheng Qi-Wen (郑齐文)^{a b c}, Yu Xue-Feng (余学峰)^{a b}, Cui Jiang-Wei (崔江维)^{a b}, Guo Qi (郭旗)^{a b}, Ren Di-Yuan (任迪远)^{a b}, Cong Zhong-Chao (丛忠超)^{a b c}, Zhou Hang (周航)^{a b c}

a Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
c University of Chinese Academy of Sciences, Beijing 100049, China

Received:2014-02-12 Revised:2014-04-07 Online:2014-10-15 Published:2014-10-15
Contact: Yu Xue-Feng E-mail:yuxf@ms.xjb.ac.cn
About author:61.80.Ed; 61.82.Fk; 85.30.Tv; 07.85.-m

摘要/Abstract

摘要： Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

关键词: total dose irradiation, static random access memory, pattern imprinting, deep sub-micron

Abstract: Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

Key words: total dose irradiation, static random access memory, pattern imprinting, deep sub-micron

中图分类号: (γ-ray effects)

61.80.Ed

61.82.Fk (Semiconductors) 85.30.Tv (Field effect devices) 07.85.-m (X- and γ-ray instruments)

郑齐文, 余学峰, 崔江维, 郭旗, 任迪远, 丛忠超, 周航. Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation[J]. , 2014, 23(10): 106102-106102.

Zheng Qi-Wen (郑齐文), Yu Xue-Feng (余学峰), Cui Jiang-Wei (崔江维), Guo Qi (郭旗), Ren Di-Yuan (任迪远), Cong Zhong-Chao (丛忠超), Zhou Hang (周航). Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation[J]. Chin. Phys. B, 2014, 23(10): 106102-106102.

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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

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